-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| F445MR12W1M1B76BPSA1 | MOSFET MODULE | Infineon Technologies | AG-EASY1B-2 | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | 25A (Tj) | Silicon Carbide (SiC) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1.84nF @ 800V | EasyPACK™ CoolSiC™ | |
| F415MR12W2M1B76BOMA1 | LOW POWER EASY AG-EASY2B-2 | Infineon Technologies | AG-EASY1B-2 | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | 75A (Tj) | Silicon Carbide (SiC) | 15mOhm @ 75A, 15V | 5.55V @ 30mA | 186nC @ 15V | 5.52nF @ 800V | EasyPACK™ CoolSiC™ | |
| F423MR12W1M1B76BPSA1 | MOSFET MODULE | Infineon Technologies | AG-EASY1B-2 | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | 45A (Tj) | Silicon Carbide (SiC) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3.68nF @ 800V | EasyPACK™ CoolSiC™ | |
| F411MR12W2M1B76BOMA1 | LOW POWER EASY AG-EASY2B-2 | Infineon Technologies | AG-EASY1B-2 | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | 100A (Tj) | Silicon Carbide (SiC) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7.36nF @ 800V | EasyPACK™ CoolSiC™ | |
| DF23MR12W1M1PB11BPSA1 | MOSFET MODULE 1200V | Infineon Technologies | AG-EASY1B-2 | 20mW | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 25A (Tj) | Silicon Carbide (SiC) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | EasyPACK™ |
| FF11MR12W1M1PB11BPSA1 | MOSFET MODULE 1200V DUAL | Infineon Technologies | AG-EASY1B-2 | 20mW | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 100A (Tj) | Silicon Carbide (SiC) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | EasyDUAL™ |
| DF11MR12W1M1PB11BPSA1 | MOSFET MODULE 1200V | Infineon Technologies | AG-EASY1B-2 | 20mW | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 50A (Tj) | Silicon Carbide (SiC) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3680pF @ 800V | EasyPACK™ |
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