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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
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Вид монтажа
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Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
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Rds On (Max) @ Id, Vgs
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Серия
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AUIRF7343Q | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 55V | 4.7A, 3.4A | Logic Level Gate | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | HEXFET® |
AUIRF7303QTR | MOSFET 2N-CH 30V 5.3A 8SOIC | Infineon Technologies | 8-SOIC | 2.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 30V | 5.3A | Logic Level Gate | 50mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | HEXFET® |
AUIRF7319Q | MOSFET N/P-CH 30V 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 6.5A, 4.9A | Logic Level Gate | 29mOhm @ 5.8A, 10V | 3V @ 250µA | 33nC @ 10V | 650pF @ 25V | HEXFET® |
AUIRF7341QTR | MOSFET 2N-CH 55V 5.1A 8SOIC | Infineon Technologies | 8-SOIC | 2.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 55V | 5.1A | Logic Level Gate | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | Automotive, AEC-Q101, HEXFET® |
AUIRF7303Q | MOSFET 2N-CH 30V 5.3A 8SOIC | Infineon Technologies | 8-SOIC | 2.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 30V | 5.3A | Logic Level Gate | 50mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | HEXFET® |
AUIRF7319QTR | MOSFET N/P-CH 30V 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 6.5A, 4.9A | Logic Level Gate | 29mOhm @ 5.8A, 10V | 3V @ 250µA | 33nC @ 10V | 650pF @ 25V | HEXFET® |
AUIRF7304QTR | MOSFET 2P-CH 20V 4A 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.3A | Logic Level Gate | 90mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 22nC @ 4.5V | 610pF @ 15V | HEXFET® |
AUIRF7316Q | MOSFET 2P-CH 30V 4.9A 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | Logic Level Gate | 58mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | HEXFET® | |
AUIRF7309QTR | MOSFET N/P-CH 30V 4A/3A 8SO | Infineon Technologies | 8-SOIC | 1.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 4A, 3A | Logic Level Gate | 50mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | HEXFET® |
IRF9910TRPBF-1 | MOSFET 2N-CH 20V 10A 8-SOIC | Infineon Technologies | 8-SOIC | 2W (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 10A (Ta), 12A (Ta) | Standard | 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V, 23nC @ 4.5V | 900pF @ 10V, 1860pF @ 10V | HEXFET® |
AUIRF7304Q | MOSFET 2P-CH 20V 4A 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.3A | Logic Level Gate | 90mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 22nC @ 4.5V | 610pF @ 15V | HEXFET® |
AUIRF7342Q | MOSFET 2P-CH 55V 3.4A 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 55V | 3.4A | Logic Level Gate | 105mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | HEXFET® |
AUIRF7309Q | MOSFET N/P-CH 30V 4A/3A 8SOIC | Infineon Technologies | 8-SOIC | 1.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 4A, 3A | Logic Level Gate | 50mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | HEXFET® |
AUIRF7342QTR | MOSFET 2P-CH 55V 3.4A 8SOIC | Infineon Technologies | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 55V | 3.4A | Logic Level Gate | 105mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | Automotive, AEC-Q101, HEXFET® |
AUIRF7103QTR | MOSFET 2N-CH 50V 3A 8SO | Infineon Technologies | 8-SOIC | 2.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 50V | 3A | Standard | 130mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | Automotive, AEC-Q101, HEXFET® |
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