-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF5810TR | MOSFET 2P-CH 20V 2.9A 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.9A | Logic Level Gate | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 9.6nC @ 4.5V | 650pF @ 16V | HEXFET® | ||||
| IRF5851TRPBF | MOSFET N/P-CH 20V 2.7A 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 2.7A, 2.2A | Logic Level Gate | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | HEXFET® | ||||
| IRF5850 | MOSFET 2P-CH 20V 2.2A 6TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 2 P-Channel (Dual) | 20V | 2.2A | Logic Level Gate | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 320pF @ 15V | ||||||
| IRLTS2242TRPBF | MOSFET P-CH 20V 6.9A 6TSOP | Infineon Technologies | 6-TSOP | Surface Mount | SOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 20V | 6.9A (Ta) | 32mOhm @ 6.9A, 4.5V | 2.5V, 4.5V | 1.1V @ 10µA | 12nC @ 4.5V | 905pF @ 10V | ±12V | HEXFET® | ||
| IRLTS6342TRPBF | MOSFET N-CH 30V 8.3A 6TSOP | Infineon Technologies | 6-TSOP | Surface Mount | SOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2W (Ta) | 30V | 8.3A (Ta) | 17.5mOhm @ 8.3A, 4.5V | 2.5V, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1010pF @ 25V | ±12V | HEXFET® | ||
| IRF5852TR | MOSFET 2N-CH 20V 2.7A 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 2.7A | Logic Level Gate | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | HEXFET® | ||||
| IRF5850TRPBF | MOSFET 2P-CH 20V 2.2A 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.2A | Logic Level Gate | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 320pF @ 15V | HEXFET® | ||||
| IRF5852TRPBF | MOSFET 2N-CH 20V 2.7A 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 2.7A | Logic Level Gate | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | HEXFET® | ||||
| IRF5852 | MOSFET 2N-CH 20V 2.7A 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 2 N-Channel (Dual) | 20V | 2.7A | Logic Level Gate | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | HEXFET® | |||||
| IRF5810 | MOSFET 2P-CH 20V 2.9A 6TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 2 P-Channel (Dual) | 20V | 2.9A | Logic Level Gate | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 9.6nC @ 4.5V | 650pF @ 16V | HEXFET® | |||||
| IRF5851TR | MOSFET N/P-CH 20V 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 2.7A, 2.2A | Logic Level Gate | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | HEXFET® | ||||
| IRF5851 | MOSFET N/PCH 20V 2.7A/2.2A 6TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | N and P-Channel | 20V | 2.7A, 2.2A | Logic Level Gate | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | HEXFET® | |||||
| IRF5810TRPBF | MOSFET 2P-CH 20V 2.9A 6-TSOP | Infineon Technologies | 6-TSOP | 960mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.9A | Logic Level Gate | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 9.6nC @ 4.5V | 650pF @ 16V | HEXFET® | ||||
| IRFTS9342TRPBF | MOSFET P-CH 30V 5.8A 6TSOP | Infineon Technologies | 6-TSOP | Surface Mount | SOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 30V | 5.8A (Ta) | 40mOhm @ 5.8A, 10V | 4.5V, 10V | 2.4V @ 25µA | 12nC @ 10V | 595pF @ 25V | ±20V | HEXFET® | ||
| IRFTS8342TRPBF | MOSFET N-CH 30V 8.2A 6TSOP | Infineon Technologies | 6-TSOP | Surface Mount | SOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2W (Ta) | 30V | 8.2A (Ta) | 19mOhm @ 8.2A, 10V | 4.5V, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | ±20V | HEXFET® |
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