-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLHS6276TRPBF | MOSFET 2N-CH 20V 4.5A PQFN | Infineon Technologies | 6-PQFN (2x2) | 1.5W | Surface Mount | 6-VQFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 4.5A | Logic Level Gate | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | HEXFET® | ||||
| IRFHS9301TR2PBF | MOSFET P-CH 30V 6A PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | P-Channel | 30V | 6A (Ta), 13A (Tc) | 37mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | HEXFET® | ||||||
| IRFHS9351TRPBF | MOSFET 2P-CH 30V 2.3A PQFN | Infineon Technologies | 6-PQFN (2x2) | 1.4W | Surface Mount | 6-VQFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 2.3A | Logic Level Gate | 170mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | HEXFET® | ||||
| IRLHS6342TR2PBF | MOSFET N-CH 30V 8.7A PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 30V | 8.7A (Ta), 19A (Tc) | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | HEXFET® | ||||||
| IRL80HS120 | MOSFET N-CH 80V 12.5A 6PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-VDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 11.5W (Tc) | 80V | 12.5A (Tc) | 32mOhm @ 7.5A, 10V | 4.5V, 10V | 2V @ 10µA | 7nC @ 4.5V | 540pF @ 25V | ±20V | |||
| IRLHS6242TRPBF | MOSFET N-CH 20V 10A PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.98W (Ta), 9.6W (Tc) | 20V | 10A (Ta), 12A (Tc) | 11.7mOhm @ 8.5A, 4.5V | 2.5V, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | ±12V | HEXFET® | ||
| IRFHS8242TRPBF | MOSFET N-CH 25V 9.9A PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.1W (Ta) | 25V | 9.9A (Ta), 21A (Tc) | 13mOhm @ 8.5A, 10V | 4.5V, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | ±20V | HEXFET® | ||
| IRFHS9301TRPBF | MOSFET P-CH 30V 6A PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.1W (Ta) | 30V | 6A (Ta), 13A (Tc) | 37mOhm @ 7.8A, 10V | 4.5V, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | ±20V | HEXFET® | ||
| IRL100HS121 | MOSFET N-CH 100V 6PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-VDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 11.5W (Tc) | 100V | 11A (Tc) | 42mOhm @ 6.7A, 10V | 4.5V, 10V | 2.3V @ 10µA | 5.6nC @ 4.5V | 440pF @ 50V | ±20V | |||
| IRFHS8242TR2PBF | MOSFET N-CH 25V 9.9A PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 25V | 9.9A (Ta), 21A (Tc) | 13mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | HEXFET® | ||||||
| IRLHS6342TRPBF | MOSFET N-CH 30V 8.7A 2X2 PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.1W (Ta) | 30V | 8.7A (Ta), 19A (Tc) | 15.5mOhm @ 8.5A, 4.5V | 2.5V, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | ±12V | HEXFET® | ||
| IRL60HS118 | MOSFET N-CH 60V 18.5A 6PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-VDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 11.5W (Tc) | 60V | 18.5A (Tc) | 17mOhm @ 11A, 10V | 4.5V, 10V | 2.3V @ 10µA | 8nC @ 4.5V | 660pF @ 25V | ±20V | |||
| IRLHS2242TR2PBF | MOSFET P-CH 20V 5.8A 2X2 PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | P-Channel | 20V | 7.2A (Ta), 15A (Tc) | 31mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | 877pF @ 10V | HEXFET® | ||||||
| IRLHS6242TR2PBF | MOSFET N-CH 20V 10A PQFN | Infineon Technologies | 6-PQFN (2x2) | Surface Mount | 6-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 20V | 10A (Ta), 12A (Tc) | 11.7mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | HEXFET® | ||||||
| IRLHS6376TRPBF | MOSFET 2N-CH 30V 3.6A 6PQFN | Infineon Technologies | 6-PQFN (2x2) | 1.5W | Surface Mount | 6-VDFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 3.6A | Logic Level Gate | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V | HEXFET® |
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