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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Выходная мощность
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Частота
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Номинальное напряжение
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Номинальный ток
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Package / Case
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Тип транзистора
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Усиление
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Voltage - Test
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Current - Test
|
Серия
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PTFB191501FV1XWSA1 | FET RF LDMOS 150W H37248-2 | Infineon Technologies | H-37248-2 | 150W | 1.99GHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.2A | ||
PTFA041501HL V1 R250 | IC FET RF LDMOS 150W PG-64248-2 | Infineon Technologies | PG-64248-2 | 150W | 470MHz | 65V | 1µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 21dB | 28V | 900mA | |
PTFA041501GL V1 R250 | IC FET RF LDMOS 150W PG-63248-2 | Infineon Technologies | PG-63248-2 | 150W | 470MHz | 65V | 1µA | 2-Flatpack, Fin Leads | LDMOS | 21dB | 28V | 900mA | |
PTFA071701EV4XWSA1 | FET RF LDMOS 170W H36248-2 | Infineon Technologies | H-36248-2 | 150W | 765MHz | 65V | 2-Flatpack, Fin Leads | LDMOS | 18.7dB | 30V | 900mA | ||
PTFA041501GL V1 | IC FET RF LDMOS 150W PG-63248-2 | Infineon Technologies | PG-63248-2 | 150W | 470MHz | 65V | 1µA | 2-Flatpack, Fin Leads | LDMOS | 21dB | 28V | 900mA | |
PTFB191501EV1XWSA1 | FET RF LDMOS 150W H36248-2 | Infineon Technologies | H-36248-2 | 150W | 1.99GHz | 65V | 2-Flatpack, Fin Leads | LDMOS | 18dB | 30V | 1.2A | ||
PTFA081501F V1 | IC FET RF LDMOS 150W H-31248-2 | Infineon Technologies | H-31248-2 | 150W | 900MHz | 65V | 10µA | 2-Flatpack, Fin Leads | LDMOS | 18dB | 28V | 950mA | GOLDMOS® |
PTFB191501FV1R250XTMA1 | FET RF LDMOS 150W H37248-2 | Infineon Technologies | H-37248-2 | 150W | 1.99GHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.2A | ||
PTF141501E V1 | IC FET RF LDMOS 150W H-30260-2 | Infineon Technologies | H-30260-2 | 150W | 1.5GHz | 65V | 1µA | 2-Flatpack, Fin Leads | LDMOS | 16.5dB | 28V | 1.5A | GOLDMOS® |
PTFA071701FV4R250XTMA1 | FET RF LDMOS 170W H37248-2 | Infineon Technologies | H-37248-2 | 150W | 765MHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18.7dB | 30V | 900mA | ||
PTFA081501E V1 | FET RF 65V 900MHZ H-30248-2 | Infineon Technologies | H-30248-2 | 150W | 900MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 28V | 950mA | GOLDMOS® |
PTFB191501EV1R250XTMA1 | FET RF LDMOS 150W H36248-2 | Infineon Technologies | H-36248-2 | 150W | 1.99GHz | 65V | 2-Flatpack, Fin Leads | LDMOS | 18dB | 30V | 1.2A | ||
PTFA071701FV4XWSA1 | FET RF LDMOS 170W H37248-2 | Infineon Technologies | H-37248-2 | 150W | 765MHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18.7dB | 30V | 900mA | ||
PTFA041501HL V1 | IC FET RF LDMOS 150W PG-64248-2 | Infineon Technologies | PG-64248-2 | 150W | 470MHz | 65V | 1µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 21dB | 28V | 900mA | |
PTFA091503ELV4R0XTMA1 | RF MOSFET LDMOS 30V H-33288-6 | Infineon Technologies | H-33288-6 | 150W | 920MHz ~ 960MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 17dB | 30V | 1.25A |
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