- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPLU300N04S4R8XTMA1 | MOSFET N-CH 40V 300A 8HSOF | Infineon Technologies | PG-HSOF-8-1 | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 429W (Tc) | 40V | 300A (Tc) | 0.77mOhm @ 100A, 10V | 10V | 4V @ 230µA | 287nC @ 10V | 22945pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IPA60R099C7XKSA1 | MOSFET N-CH 600V TO220-3 | Infineon Technologies | PG-TO220-FP | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 33W (Tc) | 600V | 12A (Tc) | 99mOhm @ 9.7A, 10V | 10V | 4V @ 490µA | 42nC @ 10V | 1819pF @ 400V | ±20V | CoolMOS™ C7 | |||||||||||
| IPP65R380C6XKSA1 | MOSFET N-CH 650V 10.6A TO220 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 83W (Tc) | 650V | 10.6A (Tc) | 380mOhm @ 3.2A, 10V | 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| BSO4410 | MOSFET N-CH 30V 11.1A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11.1A (Ta) | 13mOhm @ 11.1A, 10V | 4.5V, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| DF23MR12W1M1B67BPSA1 | LOW POWER EASY | Infineon Technologies | |||||||||||||||||||||||||||
| SPB18P06PGATMA1 | MOSFET P-CH 60V 18.7A TO-263 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 81.1W (Ta) | 60V | 18.7A (Ta) | 130mOhm @ 13.2A, 10V | 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | ±20V | SIPMOS® | |||||||||||
| IRL3302STRL | MOSFET N-CH 20V 39A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 57W (Tc) | 20V | 39A (Tc) | 20mOhm @ 23A, 7V | 4.5V, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | ±10V | HEXFET® | |||||||||||
| IRFR825PBF | MOSFET N-CH 500V 6A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 119W (Tc) | 500V | 6A (Tc) | 1.3Ohm @ 3.7A, 10V | 10V | 5V @ 250µA | 34nC @ 10V | 1346pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRF9358TRPBF | MOSFET 2P-CH 30V 9.2A 8SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 9.2A | Logic Level Gate | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | HEXFET® | |||||||||||||
| IRLR4343-701PBF | MOSFET N-CH 55V 26A DPAK | Infineon Technologies | I-PAK (LF701) | Surface Mount | TO-252-4, DPak (3 Leads + Tab) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 55V | 26A (Tc) | 50mOhm @ 4.7A, 10V | 4.5V, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | ±20V | HEXFET® | |||||||||||
| PTFA261301E V1 | IC FET RF LDMOS 130W H-30260-2 | Infineon Technologies | H-30260-2 | 130W | 2.68GHz | 65V | 10µA | 2-Flatpack, Fin Leads | LDMOS | 13.5dB | 28V | 1.4A | GOLDMOS® | ||||||||||||||||
| IPP60R190C6XKSA1 | MOSFET N-CH 600V 20.2A TO220 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 151W (Tc) | 600V | 20.2A (Tc) | 190mOhm @ 9.5A, 10V | 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| IPP220N25NFDAKSA1 | MOSFET N-CH 250V 61A TO220 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 250V | 61A (Tc) | 22mOhm @ 61A, 10V | 10V | 4V @ 270µA | 86nC @ 10V | 7076pF @ 125V | ±20V | OptiMOS™ | |||||||||||
| IRF7471TR | MOSFET N-CH 40V 10A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 40V | 10A (Ta) | 13mOhm @ 10A, 10V | 4.5V, 10V | 3V @ 250µA | 32nC @ 4.5V | 2820pF @ 20V | ±20V | HEXFET® | |||||||||||
| SPD50N03S2L06T | MOSFET N-CH 30V 50A DPAK | Infineon Technologies | PG-TO252-3 | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 136W (Tc) | 30V | 50A (Tc) | 6.4mOhm @ 50A, 10V | 4.5V, 10V | 2V @ 85µA | 68nC @ 10V | 2530pF @ 25V | ±20V | OptiMOS™ |
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