- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF200P222 | MOSFET N-CH 200V 182A TO247AC | Infineon Technologies | TO-247AC | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 556W (Tc) | 200V | 182A (Tc) | 6.6mOhm @ 82A, 10V | 10V | 4V @ 270µA | 203nC @ 10V | 9820pF @ 50V | ±20V | StrongIRFET™ | |||||||||||
| IRL520NSTRR | MOSFET N-CH 100V 10A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 48W (Tc) | 100V | 10A (Tc) | 180mOhm @ 6A, 10V | 4V, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±16V | HEXFET® | |||||||||||
| IPW65R280C6FKSA1 | MOSFET N-CH 650V 13.8A TO247 | Infineon Technologies | PG-TO247-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 650V | 13.8A (Tc) | 280mOhm @ 4.4A, 10V | 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| IPB038N12N3GATMA1 | MOSFET N-CH 120V 120A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 120V | 120A (Tc) | 3.8mOhm @ 100A, 10V | 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | ±20V | OptiMOS™ | |||||||||||
| IRFC4127ED | MOSFET N-CH WAFER | Infineon Technologies | |||||||||||||||||||||||||||
| BSS84PW L6327 | MOSFET P-CH 60V 150MA SOT-323 | Infineon Technologies | PG-SOT323-3 | Surface Mount | SC-70, SOT-323 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 300mW (Ta) | 60V | 150mA (Ta) | 8Ohm @ 150mA, 10V | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19.1pF @ 25V | ±20V | SIPMOS® | |||||||||||
| IRFH4234TRPBF | MOSFET N-CH 25V 22A PQFN | Infineon Technologies | PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.5W (Ta), 27W (Tc) | 25V | 22A (Ta) | 4.6mOhm @ 30A | 4.5V, 10V | 2.1V @ 25µA | 17nC @ 10V | 1011pF @ 13V | ±20V | HEXFET® | |||||||||||
| IRF3707L | MOSFET N-CH 30V 62A TO-262 | Infineon Technologies | TO-262 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 87W (Tc) | 30V | 62A (Tc) | 12.5mOhm @ 15A, 10V | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1990pF @ 15V | ±20V | HEXFET® | |||||||||||
| IPB80R290C3AATMA1 | MOSFET P-CH TO263-3 | Infineon Technologies | |||||||||||||||||||||||||||
| IRFU3710ZPBF | MOSFET N-CH 100V 42A I-PAK | Infineon Technologies | IPAK (TO-251) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 100V | 42A (Tc) | 18mOhm @ 33A, 10V | 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRFS5615PBF | MOSFET N-CH 150V 33A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 144W (Tc) | 150V | 33A (Tc) | 42mOhm @ 21A, 10V | 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | ±20V | ||||||||||||
| IPI80N06S207AKSA2 | MOSFET N-CH 55V 80A TO262-3 | Infineon Technologies | PG-TO262-3-1 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 250W (Tc) | 55V | 80A (Tc) | 6.6mOhm @ 68A, 10V | 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IRFZ48NSTRRPBF | MOSFET N-CH 55V 64A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 130W (Tc) | 55V | 64A (Tc) | 14mOhm @ 32A, 10V | 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | ±20V | HEXFET® | |||||||||||
| IPI90R800C3 | MOSFET N-CH 900V 6.9A TO262-3 | Infineon Technologies | PG-TO262-3 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 900V | 6.9A (Tc) | 800mOhm @ 4.1A, 10V | 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| IPB120N06S403ATMA1 | MOSFET N-CH 60V 120A TO263-3 | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 167W (Tc) | 60V | 120A (Tc) | 2.8mOhm @ 100A, 10V | 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | ±20V | OptiMOS™ |
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