- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFI4212H-117PXKMA1 | MOSFET 2N-CH 100V 11A TO220-5 | Infineon Technologies | TO-220-5 Full-Pak | 18W (Tc) | Through Hole | TO-220-5 Full Pack (Formed Leads) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 100V | 11A (Tc) | Standard | 72.5mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | ||||||||||||||
| PTFA082201FV4R250XTMA1 | IC FET RF LDMOS 220W H-37260-2 | Infineon Technologies | H-37260-2 | 220W | 894MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.95A | |||||||||||||||||
| SPP24N60C3HKSA1 | MOSFET N-CH 650V 24.3A TO-220 | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 240W (Tc) | 650V | 24.3A (Tc) | 160mOhm @ 15.4A, 10V | 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | ±20V | CoolMOS™ | |||||||||||
| BSP316PE6327 | MOSFET P-CH 100V 0.68A SOT223 | Infineon Technologies | PG-SOT223-4 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.8W (Ta) | 100V | 680mA (Ta) | 1.8Ohm @ 680mA, 10V | 4.5V, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | ±20V | SIPMOS® | |||||||||||
| IRF6794MTR1PBF | MOSFET N-CH 25V 32A DIRECTFET-MX | Infineon Technologies | DIRECTFET™ MX | Surface Mount | DirectFET™ Isometric MX | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta), 100W (Tc) | 25V | 32A (Ta), 200A (Tc) | Schottky Diode (Body) | 1.7mOhm @ 32A, 10V | 4.5V, 10V | 2.35V @ 100µA | 47nC @ 4.5V | 4420pF @ 13V | ±20V | HEXFET® | ||||||||||
| IRFB4020PBF | MOSFET N-CH 200V 18A TO-220AB | Infineon Technologies | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 100W (Tc) | 200V | 18A (Tc) | 100mOhm @ 11A, 10V | 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | ±20V | ||||||||||||
| IRFU3704ZPBF | MOSFET N-CH 20V 60A I-PAK | Infineon Technologies | IPAK (TO-251) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 48W (Tc) | 20V | 60A (Tc) | 8.4mOhm @ 15A, 10V | 4.5V, 10V | 2.55V @ 250µA | 14nC @ 4.5V | 1190pF @ 10V | ±20V | HEXFET® | |||||||||||
| IRLR3105TRLPBF | MOSFET N-CH 55V 25A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 55V | 25A (Tc) | 37mOhm @ 15A, 10V | 5V, 10V | 3V @ 250µA | 20nC @ 5V | 710pF @ 25V | ±16V | HEXFET® | |||||||||||
| IRFH5304TR2PBF | MOSFET N-CH 30V 22A 8VQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 30V | 22A (Ta), 79A (Tc) | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41nC @ 10V | 2360pF @ 10V | HEXFET® | |||||||||||||||
| IPP80N06S2H5AKSA2 | MOSFET N-CH 55V 80A TO220-3 | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 55V | 80A (Tc) | 5.5mOhm @ 80A, 10V | 10V | 4V @ 230µA | 155nC @ 10V | 4400pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| BF5020WH6327XTSA1 | MOSFET N-CH 8V 25MA SOT343 | Infineon Technologies | PG-SOT343-3D | 800MHz | 8V | 25mA | SC-82A, SOT-343 | N-Channel | 26dB | 1.2dB | 5V | 10mA | |||||||||||||||||
| IPD60R2K1CEAUMA1 | MOSFET N-CH 600V 2.3A TO-252-3 | Infineon Technologies | PG-TO252-3 | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 38W (Tc) | 600V | 2.3A (Tc) | 2.1Ohm @ 760mA, 10V | 10V | 3.5V @ 60µA | 6.7nC @ 10V | 140pF @ 100V | ±20V | CoolMOS™ CE | |||||||||||
| IRF7805ATR | MOSFET N-CH 30V 13A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 13A (Ta) | 11mOhm @ 7A, 4.5V | 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | HEXFET® | ||||||||||||
| IRF540NSTRRPBF | MOSFET N-CH 100V 33A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 130W (Tc) | 100V | 33A (Tc) | 44mOhm @ 16A, 10V | 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | ±20V | HEXFET® | |||||||||||
| IPW65R080CFDFKSA1 | MOSFET N-CH 700V 43.3A TO247 | Infineon Technologies | PG-TO247-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 391W (Tc) | 700V | 43.3A (Tc) | 80mOhm @ 17.6A, 10V | 10V | 4.5V @ 1.76mA | 170nC @ 10V | 5030pF @ 100V | ±20V | CoolMOS™ |
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