- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPS04N03LA G | MOSFET N-CH 25V 50A IPAK | Infineon Technologies | PG-TO251-3 | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 115W (Tc) | 25V | 50A (Tc) | 4mOhm @ 50A, 10V | 4.5V, 10V | 2V @ 80µA | 41nC @ 5V | 5199pF @ 15V | ±20V | OptiMOS™ | |||||||||||
| IRF7807VD2TR | MOSFET N-CH 30V 8.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 8.3A (Ta) | Schottky Diode (Isolated) | 25mOhm @ 7A, 4.5V | 4.5V | 1V @ 250µA | 14nC @ 4.5V | ±20V | FETKY™ | |||||||||||
| IRFR18N15DTRLP | MOSFET N-CH 150V 18A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | N-Channel | 150V | 18A (Tc) | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | 900pF @ 25V | HEXFET® | |||||||||||||||
| AUIRFR2407TRL | MOSFET N-CH 75V 42A DPAK | Infineon Technologies | D-PAK (TO-252AA) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 110W (Tc) | 75V | 42A (Tc) | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | HEXFET® | |||||||||||||
| IRFU9120N | MOSFET P-CH 100V 6.6A I-PAK | Infineon Technologies | IPAK (TO-251) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 40W (Tc) | 100V | 6.6A (Tc) | 480mOhm @ 3.9A, 10V | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRF7478PBF | MOSFET N-CH 60V 7A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 60V | 7A (Ta) | 26mOhm @ 4.2A, 10V | 4.5V, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRFZ46NSTRL | MOSFET N-CH 55V 53A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 107W (Tc) | 55V | 53A (Tc) | 16.5mOhm @ 28A, 10V | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | HEXFET® | |||||||||||
| SPI80N06S2-08 | MOSFET N-CH 55V 80A I2PAK | Infineon Technologies | PG-TO262-3-1 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 215W (Tc) | 55V | 80A (Tc) | 8mOhm @ 58A, 10V | 10V | 4V @ 150µA | 96nC @ 10V | 3800pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IPI50N12S3L15AKSA1 | MOSFET N-CHANNEL_100+ | Infineon Technologies | |||||||||||||||||||||||||||
| IPS031N03LGAKMA1 | LV POWER MOS | Infineon Technologies | |||||||||||||||||||||||||||
| IRF7426TR | MOSFET N-CH 20V 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | N-Channel | 20V | HEXFET® | ||||||||||||||||||||
| IPP90N04S402AKSA1 | MOSFET N-CH 40V 90A TO220-3-1 | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 40V | 90A (Tc) | 2.5mOhm @ 90A, 10V | 10V | 4V @ 95µA | 118nC @ 10V | 9430pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IPP65R125C7XKSA1 | MOSFET N-CH 650V 18A TO220 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 101W (Tc) | 650V | 18A (Tc) | 125mOhm @ 8.9A, 10V | 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | ±20V | CoolMOS™ C7 | |||||||||||
| BF 1005SR E6327 | MOSFET N-CH 8V 25MA SOT-143R | Infineon Technologies | PG-SOT-143R-3D | 800MHz | 8V | 25mA | SOT-143R | N-Channel | 22dB | 1.6dB | 5V | ||||||||||||||||||
| IRLB8743PBF | MOSFET N-CH 30V 78A TO220AB | Infineon Technologies | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 30V | 78A (Tc) | 3.2mOhm @ 40A, 10V | 4.5V, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 5110pF @ 15V | ±20V | HEXFET® |
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