- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7459PBF | MOSFET N-CH 20V 12A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 20V | 12A (Ta) | 9mOhm @ 12A, 10V | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2480pF @ 10V | ±12V | HEXFET® | |||||||||||
| SPU02N60C3BKMA1 | MOSFET N-CH 650V 1.8A IPAK | Infineon Technologies | PG-TO251-3 | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 25W (Tc) | 650V | 1.8A (Tc) | 3Ohm @ 1.1A, 10V | 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | ±20V | CoolMOS™ | |||||||||||
| IRF7707TRPBF | MOSFET P-CH 20V 7A 8-TSSOP | Infineon Technologies | 8-TSSOP | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.5W (Ta) | 20V | 7A (Ta) | 22mOhm @ 7A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | 2361pF @ 15V | ±12V | HEXFET® | |||||||||||
| BSP92P E6327 | MOSFET P-CH 250V 0.26A SOT-223 | Infineon Technologies | PG-SOT223-4 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.8W (Ta) | 250V | 260mA (Ta) | 12Ohm @ 260mA, 10V | 2.8V, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | ±20V | SIPMOS® | |||||||||||
| IPB120N04S401ATMA1 | MOSFET N-CH 40V 120A TO263-3-2 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 188W (Tc) | 40V | 120A (Tc) | 1.5mOhm @ 100A, 10V | 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IRFR7746PBF | MOSFET N-CH 75V 56A D2PAK | Infineon Technologies | D-PAK (TO-252AA) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 99W (Tc) | 75V | 56A (Tc) | 11.2mOhm @ 35A, 10V | 6V, 10V | 3.7V @ 100µA | 89nC @ 10V | 3107pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRF7468PBF | MOSFET N-CH 40V 9.4A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 40V | 9.4A (Ta) | 15.5mOhm @ 9.4A, 10V | 4.5V, 10V | 2V @ 250µA | 34nC @ 4.5V | 2460pF @ 20V | ±12V | HEXFET® | |||||||||||
| IPD90N10S4L06ATMA1 | MOSFET N-CH TO252-3 | Infineon Technologies | PG-TO252-3-313 | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 136W (Tc) | 100V | 90A (Tc) | 6.6mOhm @ 90A, 10V | 4.5V, 10V | 2.1V @ 90µA | 98nC @ 10V | 6250pF @ 25V | ±16V | Automotive, AEC-Q101, OptiMOS™ | |||||||||||
| IRLR3715PBF | MOSFET N-CH 20V 54A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 71W (Tc) | 20V | 54A (Tc) | 14mOhm @ 26A, 10V | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | HEXFET® | |||||||||||
| IPU80R1K4CEBKMA1 | MOSFET N-CH 800V 3.9A TO251-3 | Infineon Technologies | PG-TO251-3 | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 63W (Tc) | 800V | 3.9A (Tc) | 1.4Ohm @ 2.3A, 10V | 10V | 3.9V @ 240µA | 23nC @ 10V | 570pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| IRF8707TRPBF | MOSFET N-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11A (Ta) | 11.9mOhm @ 11A, 10V | 4.5V, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | ±20V | HEXFET® | |||||||||||
| SIPC10N80C3X1SA1 | TRANSISTOR N-CH | Infineon Technologies | |||||||||||||||||||||||||||
| IRF7805ZGTRPBF | MOSFET N-CH 30V 16A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 16A (Ta) | 6.8mOhm @ 16A, 10V | 4.5V, 10V | 2.25V @ 250µA | 27nC @ 4.5V | 2080pF @ 15V | ±20V | HEXFET® | |||||||||||
| PTFA091201HL V1 R250 | IC FET RF LDMOS 120W PG-64248-2 | Infineon Technologies | PG-64248-2 | 110W | 960MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18.5dB | 28V | 750mA | |||||||||||||||||
| IPB110P06LMATMA1 | MOSFET P-CH 60V TO263-3 | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 300W (Tc) | 60V | 100A (Tc) | 11mOhm @ 100A, 10V | 4.5V, 10V | 2V @ 5.55mA | 281nC @ 10V | 8500pF @ 30V | ±20V | OptiMOS™ |
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