- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFZ48VSTRLPBF | MOSFET N-CH 60V 72A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 60V | 72A (Tc) | 12mOhm @ 43A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | ±20V | HEXFET® | |||||||||||
| IPL65R070C7AUMA1 | MOSFET N-CH 4VSON | Infineon Technologies | PG-VSON-4 | Surface Mount | 4-PowerTSFN | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 169W (Tc) | 650V | 28A (Tc) | 70mOhm @ 8.5A, 10V | 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 100V | ±20V | CoolMOS™ C7 | |||||||||||
| IRFR5305CPBF | MOSFET P-CH 55V 31A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 110W (Tc) | 55V | 31A (Tc) | 65mOhm @ 16A, 10V | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRFZ46ZPBF | MOSFET N-CH 55V 51A TO-220AB | Infineon Technologies | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 82W (Tc) | 55V | 51A (Tc) | 13.6mOhm @ 31A, 10V | 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRFR7440TRPBF | MOSFET N CH 40V 90A DPAK | Infineon Technologies | D-PAK (TO-252AA) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 40V | 90A (Tc) | 2.4mOhm @ 90A, 10V | 6V, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | ±20V | HEXFET® | |||||||||||
| BSS159NL6327HTSA1 | MOSFET N-CH 60V 230MA SOT-23 | Infineon Technologies | SOT-23-3 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360mW (Ta) | 60V | 230mA (Ta) | Depletion Mode | 3.5Ohm @ 160mA, 10V | 0V, 10V | 2.4V @ 26µA | 2.9nC @ 5V | 44pF @ 25V | ±20V | SIPMOS® | ||||||||||
| IRLR3303TRL | MOSFET N-CH 30V 35A DPAK | Infineon Technologies | D-Pak | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 68W (Tc) | 30V | 35A (Tc) | 31mOhm @ 21A, 10V | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | HEXFET® | |||||||||||
| IRF5802TRPBF | MOSFET N-CH 150V 0.9A 6-TSOP | Infineon Technologies | Micro6™(TSOP-6) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2W (Ta) | 150V | 900mA (Ta) | 1.2Ohm @ 540mA, 10V | 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | ±30V | HEXFET® | |||||||||||
| IPP075N15N3GHKSA1 | MOSFET N-CH 150V 100A TO220-3 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 150V | 100A (Tc) | 7.5mOhm @ 100A, 10V | 8V, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | ±20V | OptiMOS™ | |||||||||||
| BSO150N03 | MOSFET 2N-CH 30V 7.6A 8DSO | Infineon Technologies | PG-DSO-8 | 1.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 7.6A | Standard | 15mOhm @ 9.1A, 10V | 2V @ 25µA | 15nC @ 5V | 1890pF @ 15V | OptiMOS™ | |||||||||||||
| IPT004N03LATMA1 | MOSFET N-CH 30V 300A 8HSOF | Infineon Technologies | PG-HSOF-8-1 | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.8W (Ta), 300W (Tc) | 30V | 300A (Tc) | 0.4mOhm @ 150A, 10V | 4.5V, 10V | 2.2V @ 250µA | 163nC @ 4.5V | 24000pF @ 15V | ±20V | OptiMOS™ | |||||||||||
| BSC0910NDIATMA1 | MOSFET 2N-CH 25V 16A/31A TISON8 | Infineon Technologies | PG-TISON-8 | 1W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 25V | 11A, 31A | Logic Level Gate, 4.5V Drive | 4.6mOhm @ 25A, 10V | 2V @ 250µA | 6.6nC @ 4.5V | 4500pF @ 12V | OptiMOS™ | |||||||||||||
| IRF3805LPBF | MOSFET N-CH 55V 75A TO-262 | Infineon Technologies | TO-262 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 55V | 75A (Tc) | 3.3mOhm @ 75A, 10V | 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | ±20V | HEXFET® | |||||||||||
| IRF3707ZPBF | MOSFET N-CH 30V 59A TO-220AB | Infineon Technologies | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 30V | 59A (Tc) | 9.5mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | HEXFET® | |||||||||||
| IPA60R180P7XKSA1 | MOSFET N-CHANNEL 650V 18A TO220 | Infineon Technologies | PG-TO220 Full Pack | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 26W (Tc) | 650V | 18A (Tc) | 180mOhm @ 5.6A, 10V | 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | ±20V | CoolMOS™ P7 |
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