• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
Найдено: 62
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
SK3065 RF MIXER AND IF STAGES Harris Corporation TO-72 330mW Through Hole TO-206AF, TO-72-4 Metal Can 2 N-Channel (Dual) 20V 50mA Standard
BUZ21P2 100V, N-CHANNEL POWER MOSFET Harris Corporation
IRF712S2497 1.7A, 400V, 5OHM, N-CHANNEL, Harris Corporation
IRFR21496 2.2A 250V 2.000 OHM N-CHANNEL Harris Corporation
IRFP250S2453 33A, 200V, 0.085 OHM, N-CHANNEL Harris Corporation
RFF70N06/3 25A, 60V, 0.025 OHMS, N CHANNEL Harris Corporation
SK3991 N-CHANNEL POWER MOSFET Harris Corporation TO-72 360mW Through Hole TO-206AF, TO-72-4 Metal Can 2 N-Channel (Dual) 25V 30mA Standard
RFIS70N06SM 70A, 60V, 0.014OHM, N-CHANNEL, Harris Corporation
IRFR420U 2.5A 500V 3.000 OHM N-CHANNEL Harris Corporation
HP4936DYT N-CHANNEL POWER MOSFET Harris Corporation 8-SOIC 2W (Ta) Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 5.8A (Ta) Logic Level Gate 37mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 625pF @ 25V
RF1S25N06SMR4643 25A, 60V, 0.047 OHM, N-CHANNEL Harris Corporation
IRF442119U 7A, 500V, 1.1OHM, N-CHANNEL, Harris Corporation
RF1S30P05 30A, 50V, 0.065OHM, P-CHANNEL, Harris Corporation
IRFR1109A PFET, 4.7A I(D), 100V, 0.54OHM, Harris Corporation
SP600 HALF BRIDGE BASED MOSFET DRIVER, Harris Corporation