-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GA16JT17-247 | TRANS SJT 1700V 16A TO-247AB | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 282W (Tc) | 1700V | 16A (Tc) (90°C) | 110mOhm @ 16A | |
| GA08JT17-247 | TRANS SJT 1700V 8A TO-247AB | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 48W (Tc) | 1700V | 8A (Tc) (90°C) | 250mOhm @ 8A | |
| GA20SICP12-247 | TRANS SJT 1200V 45A TO247 | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | 282W (Tc) | 1200V | 45A (Tc) | 50mOhm @ 20A | 3091pF @ 800V |
| GA05JT12-247 | TRANS SJT 1200V 5A | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 106W (Tc) | 1200V | 5A (Tc) | 280mOhm @ 5A | |
| GA03JT12-247 | TRANS SJT 1200V 3A TO-247AB | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 15W (Tc) | 1200V | 3A (Tc) (95°C) | 460mOhm @ 3A | |
| GA06JT12-247 | TRANS SJT 1200V 6A TO-247AB | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 1200V | 6A (Tc) (90°C) | 220mOhm @ 6A | ||
| GA10JT12-247 | TRANS SJT 1.2KV 10A | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 170W (Tc) | 1200V | 10A (Tc) | 140mOhm @ 10A | |
| GA04JT17-247 | TRANS SJT 1700V 4A TO-247AB | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 106W (Tc) | 1700V | 4A (Tc) (95°C) | 480mOhm @ 4A | |
| GA20JT12-247 | TRANS SJT 1.2KV 20A | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 282W (Tc) | 1200V | 20A (Tc) | 70mOhm @ 20A | |
| GA50JT12-247 | TRANS SJT 1.2KV 50A | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 583W (Tc) | 1200V | 100A (Tc) | 25mOhm @ 50A | 7209pF @ 800V |
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