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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8P26080HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 14W | 2.5GHz ~ 2.7GHz | 65V | 10µA | NI-780S-4 | LDMOS (Dual) | 15dB | 28V | 300mA |
| MRF8S9170NR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780S-4 | 50W | 920MHz ~ 960MHz | 70V | 10µA | NI-780S-4 | LDMOS | 19.3dB | 28V | 1A |
| MRFE6VP6300HSR3 | RF 2-ELEMENT, ULTRA HIGH FREQUE | Freescale Semiconductor | NI-780S-4 | 300W | 230MHz | 130V | NI-780S-4 | LDMOS (Dual) | 26.5dB | 50V | 100mA | |
| MD7P19130HSR5 | FET RF 2CH 65V 1.99GHZ NI780HS-4 | Freescale Semiconductor | NI-780S-4 | 40W | 1.99GHz | 65V | NI-780S-4 | LDMOS (Dual) | 20dB | 28V | 1.25A | |
| MRF7P20040HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 10W | 1.8GHz ~ 2.2GHz | 65V | 10µA | NI-780S-4 | LDMOS (Dual) | 18.2dB | 32V | 150mA |
| AFT26P100-4WSR3 | RF N CHANNEL, MOSFET | Freescale Semiconductor | NI-780S-4 | 22W | 2.69GHz | 65V | NI-780S-4 | LDMOS (Dual) | 15.1dB | 28V | 200mA | |
| MRF8P20161HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 37W | 1.92GHz | 65V | NI-780S-4 | LDMOS (Dual) | 16.4dB | 28V | 550mA | |
| MRF8P20100HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 20W | 2.03GHz | 65V | NI-780S-4 | LDMOS (Dual) | 16dB | 28V | 400mA | |
| MRF8P20160HSR3 | RF 2-ELEMENT, L BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 37W | 1.92GHz | 65V | NI-780S-4 | LDMOS (Dual) | 16.5dB | 28V | 550mA | |
| MD7P19130HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 40W | 1.99GHz | 65V | NI-780S-4 | LDMOS (Dual) | 20dB | 28V | 1.25A | |
| MRF8P20165WHSR5 | FET RF 2CH 65V 2.01GHZ NI780S4 | Freescale Semiconductor | NI-780S-4 | 37W | 1.88GHz ~ 2.025GHz | 65V | 10µA | NI-780S-4 | LDMOS (Dual) | 14.8dB | 28V | 550mA |
| MRF8HP21130HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 28W | 2.17GHz | 65V | NI-780S-4 | LDMOS (Dual) | 14dB | 28V | 360mA |
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