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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Выходная мощность
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Частота
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Номинальное напряжение
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Номинальный ток
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Package / Case
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Тип транзистора
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Усиление
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Voltage - Test
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Current - Test
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MRF6VP3450HR6 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-1230 | 90W | 860MHz | 110V | NI-1230 | LDMOS (Dual) | 22.5dB | 50V | 1.4A | |
MRF6P23190HR5 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI-1230 | 40W | 2.39GHz | 68V | NI-1230 | LDMOS | 14dB | 28V | 1.9A | |
MRFE8VP8600HR5 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-1230 | 140W | 470MHz ~ 860MHz | 115V | 20µA | NI-1230 | LDMOS (Dual) | 21dB | 50V | 1.4A |
MRF6VP121KHR5178 | LATERAL N CHANNEL BROADBAND RF , | Freescale Semiconductor | NI-1230 | 1000W | 965MHz ~ 1.215GHz | 110V | 100µA | NI-1230 | LDMOS (Dual) | 21.4dB | 50V | 150mA |
MRF5P21240HR6 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 52W | 2.11GHz ~ 2.17GHz | 65V | 10µA | NI-1230 | LDMOS | 13dB | 28V | 2.2A |
MRF8S21200HR6 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 48W | 2.14GHz | 65V | NI-1230 | LDMOS (Dual) | 18.1dB | 28V | 1.4A | |
MRF6P21190HR5 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-1230 | 44W | 2.12GHz | 68V | NI-1230 | LDMOS | 15.5dB | 28V | 1.9A | |
MRF6VP121KHR5-FR | RF 2-ELEMENT, L BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 1000W | 1.215GHz | 110V | 10µA | NI-1230 | LDMOS (Dual) | 21.4dB | 50V | 150mA |
MRF6VP41KHR5 | RF N-CHANNEL, MOSFET | Freescale Semiconductor | NI-1230 | 1000W | 450MHz | 110V | NI-1230 | LDMOS (Dual) | 20dB | 50V | 150mA | |
MRF6VP2600HR5-FR | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-1230 | 600W | 500MHz | 110V | 50µA | NI-1230 | LDMOS (Dual) | 25dB | 50V | 2.6A |
MRF6VP41KHR7 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI-1230 | 1000W | 450MHz | 110V | NI-1230 | LDMOS (Dual) | 20dB | 50V | 150mA | |
MRF5P21180HR5 | FET RF 65V 2.16GHZ NI-1230 | Freescale Semiconductor | NI-1230 | 38W | 2.16GHz | 65V | NI-1230 | LDMOS | 14dB | 28V | 1.6A | |
MRF6P18190HR6 | RF K BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 44W | 1.805GHz ~ 1.88GHz | 68V | 10µA | NI-1230 | LDMOS | 15.9dB | 28V | 2A |
MRF6P24190HR6 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 40W | 2.39GHz | 68V | NI-1230 | LDMOS | 14dB | 28V | 1.9A |
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