- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
|
Тип корпуса
|
Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
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MRF21030LR5 | FET RF 65V 2.14GHZ NI-400 | Freescale Semiconductor | NI-400 | 30W | 2.14GHz | 65V | NI-400 | LDMOS | 13dB | 28V | 250mA | |
MRF21060R3 | N-CHANNEL POWER MOSFET | Freescale Semiconductor | NI-780H-2L | 60W | 2.1GHz ~ 2.2GHz | 65V | 6µA | SOT-957A | LDMOS | 12.5dB | 28V | 500mA |
MRF8S18120HR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-780H-2L | 72W | 1.81GHz | 65V | SOT-957A | LDMOS | 18.2dB | 28V | 800mA | |
MRF18060BLSR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 60W | 1.93GHz ~ 1.99GHz | 65V | 6µA | NI-780S | N-Channel | 13dB | 26V | 500mA |
MRF9045NBR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-272-2 | 45W | 1GHz | 65V | 10µA | TO-272BC | LDMOS | 19dB | 28V | 350mA |
MRF6VP3450HR6 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-1230 | 90W | 860MHz | 110V | NI-1230 | LDMOS (Dual) | 22.5dB | 50V | 1.4A | |
MRF6S27085HSR5 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI-780S | 20W | 2.66GHz | 68V | NI-780S | LDMOS | 15.5dB | 28V | 900mA | |
MRF6S19120HR5 | FET RF 68V 1.99GHZ NI-780 | Freescale Semiconductor | NI-780H-2L | 19W | 1.99GHz | 68V | SOT-957A | LDMOS | 15dB | 28V | 1A | |
MRFG35010NT1 | RF S BAND, GALLIUM ARSENIDE, N-C | Freescale Semiconductor | PLD-1.5 | 9W | 3.55GHz | 15V | PLD-1.5 | pHEMT FET | 10dB | 12V | 180mA | |
MRF8P26080HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 14W | 2.5GHz ~ 2.7GHz | 65V | 10µA | NI-780S-4 | LDMOS (Dual) | 15dB | 28V | 300mA |
MRF6S9130HSR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780S | 27W | 880MHz | 68V | NI-780S | LDMOS | 19.2dB | 28V | 950mA | |
MRF21125R3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-880H-2L | 125W | 2.11GHz ~ 2.17GHz | 65V | 10µA | SOT-957A | N-Channel | 13dB | 28V | 1.6A |
MRF5S21150HR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-880 | 33W | 2.11GHz ~ 2.17GHz | 65V | NI-880 | LDMOS | 12.5dB | 28V | 1.3A | |
MRF1511NT1 | RF VERY HIGH FREQUENCY BAND, N-C | Freescale Semiconductor | PLD-1.5 | 8W | 175MHz | 40V | 4A | PLD-1.5 | LDMOS | 13dB | 7.5V | 150mA |
MRF6P23190HR5 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI-1230 | 40W | 2.39GHz | 68V | NI-1230 | LDMOS | 14dB | 28V | 1.9A |
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