- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
|
Тип корпуса
|
Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
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MRFG35003NR5 | FET RF 15V 3.55GHZ | Freescale Semiconductor | PLD-1.5 | 3W | 3.55GHz | 15V | PLD-1.5 | pHEMT FET | 11.5dB | 12V | 55mA | |
MRF6S9160HSR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780S | 35W | 880MHz ~ 960MHz | 68V | 10µA | NI-780S | LDMOS | 20.9dB | 28V | 1.2A |
MRF8P20100HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 20W | 2.03GHz | 65V | NI-780S-4 | LDMOS (Dual) | 16dB | 28V | 400mA | |
MRF7S19080HR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-780H-2L | 24W | 1.99GHz | 65V | SOT-957A | LDMOS | 18dB | 28V | 750mA | |
MRF6S19140HR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-880H-2L | 29W | 1.93GHz ~ 1.99GHz | 68V | 10µA | SOT-957A | LDMOS | 16dB | 28V | 1.15A |
MRF6S21100NR1 | RF S BAND, N-CHANNEL , TO-270 | Freescale Semiconductor | TO-270 WB-4 | 23W | 2.11GHz ~ 2.17GHz | 68V | 10µA | TO-270AB | LDMOS | 14.5dB | 28V | 1.05A |
MRF8S21120HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 28W | 2.17GHz | 65V | NI-780S | LDMOS | 17.6dB | 28V | 850mA | |
MRF9030LR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-360 | 30W | 1GHz | 68V | 10µA | NI-360 | LDMOS | 19dB | 26V | 250mA |
MHT1008NT1515 | RF POWER LDMOS TRANSISTOR FOR CO | Freescale Semiconductor | PLD-1.5W | 12.5W | 2.45GHz | 65V | 10µA | PLD-1.5W | LDMOS | 20.9dB | 28V | 110mA |
MRF5S9101MBR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-272 WB-4 | 100W | 960MHz | 68V | TO-272BB | LDMOS | 17.5dB | 26V | 700mA | |
MRFIC1501R2 | WIDE BAND LOW POWER AMPLIFIER, 1 | Freescale Semiconductor | ||||||||||
MRF6VP41KHR5 | RF N-CHANNEL, MOSFET | Freescale Semiconductor | NI-1230 | 1000W | 450MHz | 110V | NI-1230 | LDMOS (Dual) | 20dB | 50V | 150mA | |
MRF6S19140HR5 | FET RF 68V 1.99GHZ NI-880 | Freescale Semiconductor | NI-880 | 29W | 1.93GHz ~ 1.99GHz | 68V | NI-880 | LDMOS | 16dB | 28V | 1.15A | |
MRF6VP2600HR5-FR | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-1230 | 600W | 500MHz | 110V | 50µA | NI-1230 | LDMOS (Dual) | 25dB | 50V | 2.6A |
MRF8S19260HSR6 | RF 2-ELEMENT, L BAND, N-CHANNEL | Freescale Semiconductor | NI1230S-8 | 74W | 1.99GHz | 65V | SOT-1110B | LDMOS (Dual) | 18.2dB | 30V | 1.6A |
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