- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
|
Тип корпуса
|
Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
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MRF8S9220HSR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780S | 65W | 960MHz | 70V | NI-780S | LDMOS | 19.4dB | 28V | 1.6A | |
MRF6VP121KHR5-FR | RF 2-ELEMENT, L BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 1000W | 1.215GHz | 110V | 10µA | NI-1230 | LDMOS (Dual) | 21.4dB | 50V | 150mA |
A2T26H160-24SR3 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-780S-4L2L | 28W | 2.58GHz | 65V | NI-780S-4L2L | LDMOS (Dual) | 15.5dB | 28V | 350mA | |
MRF7S38040HSR5 | FET RF 65V 3.6GHZ NI-400S | Freescale Semiconductor | NI-400S-2S | 8W | 3.4GHz ~ 3.6GHz | 65V | NI-400S-2S | LDMOS | 14dB | 30V | 450mA | |
MRF8P20161HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 37W | 1.92GHz | 65V | NI-780S-4 | LDMOS (Dual) | 16.4dB | 28V | 550mA | |
MRFE6VP61K25NR6 | WIDEBAND RF POWER LDMOS TRANSIST | Freescale Semiconductor | ||||||||||
MRFE6S9201HSR5 | FET RF 66V 880MHZ NI-780S | Freescale Semiconductor | NI-780S | 40W | 880MHz | 66V | NI-780S | LDMOS | 20.8dB | 28V | 1.4A | |
MRF7S16150HSR3 | RF POWER N-CHANNEL, MOSFET | Freescale Semiconductor | NI-780S | 32W | 1.6GHz ~ 1.66GHz | 65V | NI-780S | LDMOS | 19.7dB | 28V | 1.5A | |
MRF6S27015GNR1 | RF S BAND, N-CHANNEL , TO-270 | Freescale Semiconductor | TO-270-2 GULL | 3W | 2.6GHz | 68V | TO-270BA | LDMOS | 14dB | 28V | 160mA | |
MRF8S21100HR5 | RF POWER N-CHANNEL, MOSFET | Freescale Semiconductor | NI-780H-2L | 24W | 2.17GHz | 65V | SOT-957A | N-Channel | 18.3dB | 28V | 700mA | |
MRF5S19060MBR1 | RF L BAND, N-CHANNEL , TO-270 | Freescale Semiconductor | TO-272 WB-4 | 12W | 1.93GHz ~ 1.99GHz | 65V | TO-272BB | LDMOS | 14dB | 28V | 750mA | |
MRF5S9101MR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-270 WB-4 | 100W | 869MHz ~ 960MHz | 68V | 10µA | TO-270AB | 17.5dB | 26V | 700mA | |
MRFE6S9160HR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780H-2L | 35W | 880MHz | 66V | SOT-957A | LDMOS | 21dB | 28V | 1.2A | |
MRF5S9150HR5 | FET RF 68V 880MHZ NI-780S | Freescale Semiconductor | NI-780H-2L | 33W | 880MHz | 68V | SOT-957A | LDMOS | 19.7dB | 28V | 1.5A | |
MRF6V2300NR5 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | TO-270 WB-4 | 300W | 220MHz | 110V | TO-270AB | LDMOS | 25.5dB | 50V | 900mA |
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