- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
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MRF7S38075HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 12W | 3.4GHz ~ 3.6GHz | 65V | NI-780S | LDMOS | 14dB | 30V | 900mA | |
MRF7S21170HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-880S | 50W | 2.17GHz | 65V | NI-880S | LDMOS | 16dB | 28V | 1.4A | |
MRF7P20040HSR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 10W | 1.8GHz ~ 2.2GHz | 65V | 10µA | NI-780S-4 | LDMOS (Dual) | 18.2dB | 32V | 150mA |
MRF5S21100HSR5 | FET RF 65V 2.17GHZ NI-780S | Freescale Semiconductor | NI-780S | 23W | 2.16GHz ~ 2.17GHz | 65V | NI-780S | LDMOS | 13.5dB | 28V | 1.05A | |
MRF6VP121KHR5178 | LATERAL N CHANNEL BROADBAND RF , | Freescale Semiconductor | NI-1230 | 1000W | 965MHz ~ 1.215GHz | 110V | 100µA | NI-1230 | LDMOS (Dual) | 21.4dB | 50V | 150mA |
MRF6VP11KHR5 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | NI-1230S-4 GULL | 1000W | 130MHz | 110V | NI-1230S-4 GW | LDMOS (Dual) | 26dB | 50V | 150mA | |
MRF19085LR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-780H-2L | 18W | 1.93GHz ~ 1.99GHz | 65V | SOT-957A | LDMOS | 13dB | 26V | 850mA | |
MRF18030BLSR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-400S | 30W | 1.8GHz ~ 2GHz | 65V | 1µA | NI-400S | N-Channel | 14dB | 26V | 250mA |
MRF5P21240HR6 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 52W | 2.11GHz ~ 2.17GHz | 65V | 10µA | NI-1230 | LDMOS | 13dB | 28V | 2.2A |
MRF6S27085HR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780H-2L | 20W | 2.66GHz | 68V | SOT-957A | LDMOS | 15.5dB | 28V | 900mA | |
MRF7S21080HR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4S2S | 22W | 2.11GHz ~ 2.17GHz | 65V | 10µA | NI-780S-4S2S | LDMOS | 18dB | 28V | 800mA |
MRF9135LR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780H-2L | 135W | 865MHz ~ 895MHz | 65V | 10µA | SOT-957A | LDMOS | 17.8dB | 26V | 1.1A |
MRF6S21190HR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-880 | 54W | 2.11GHz ~ 2.17GHz | 68V | NI-880 | LDMOS | 16dB | 28V | 1.6A | |
AFT26HW050SR3 | RF N CHANNEL, MOSFET | Freescale Semiconductor | NI-780-4S4 | 9W | 2.496GHz ~ 2.69GHz | 65V | 10µA | NI-780-4S4 | LDMOS (Dual) | 14.2dB | 28V | 100mA |
MRF8S21200HR6 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-1230 | 48W | 2.14GHz | 65V | NI-1230 | LDMOS (Dual) | 18.1dB | 28V | 1.4A |
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