- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
|
Тип корпуса
|
Выходная мощность
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Усиление
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
MRF377HR3 | RF 2-ELEMENT, ULTRA HIGH FREQUE | Freescale Semiconductor | NI-860C3 | 45W | 470MHz ~ 860MHz | 65V | 1µA | NI-860C3 | LDMOS | 18.2dB | 32V | 2A |
MRF8P23160WHSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780-4 | 30W | 2.32GHz | 65V | NI-780-4 | N-Channel | 14.1dB | 28V | 600mA | |
MD7P19130HR3 | RF 2-ELEMENT, S BAND, N-CHANNEL | Freescale Semiconductor | NI-780-4 | 40W | 1.99GHz | 65V | NI780-4 | LDMOS (Dual) | 20dB | 28V | 1.25A | |
MRF5S9100NR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-270 WB-4 | 20W | 880MHz | 68V | TO-270AB | LDMOS | 19.5dB | 26V | 950mA | |
MRFE6S9160HSR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780S | 35W | 880MHz | 66V | NI-780S | LDMOS | 21dB | 28V | 1.2A | |
MRF8S9100HSR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780S | 72W | 920MHz | 70V | NI-780S | LDMOS | 19.3dB | 28V | 500mA | |
MRF6S21050LR5 | FET RF 68V 2.16GHZ NI-400 | Freescale Semiconductor | NI-400 | 11.5W | 2.16GHz | 68V | NI-400 | LDMOS | 16dB | 28V | 450mA | |
MRFE6S9200HR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-880 | 58W | 880MHz | 66V | NI-880 | LDMOS | 21dB | 28V | 1.4A | |
MRF6V3090NR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-270 WB-4 | 18W | 860MHz | 110V | TO-270AB | LDMOS | 22dB | 50V | 350mA | |
MWE6IC9100NBR1-FR | NARROW BAND HIGH POWER AMPLIFIER | Freescale Semiconductor | TO-272 WB-14 | 100W | 869MHz ~ 960MHz | 66V | 10µA | TO-272-14 Variant, Flat Leads | LDMOS | 33.5dB | 26V | 120mA |
MRF6S19140HSR5 | FET RF 68V 1.99GHZ NI-880S | Freescale Semiconductor | NI-880S | 29W | 1.93GHz ~ 1.99GHz | 68V | NI-880S | LDMOS | 16dB | 28V | 1.15A | |
MRF5S9101NR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-270 WB-4 | 100W | 869MHz ~ 960MHz | 68V | 10µA | TO-270AB | 17.5dB | 26V | 700mA | |
MD7P19130HSR5 | FET RF 2CH 65V 1.99GHZ NI780HS-4 | Freescale Semiconductor | NI-780S-4 | 40W | 1.99GHz | 65V | NI-780S-4 | LDMOS (Dual) | 20dB | 28V | 1.25A | |
MRF6V13250HR5 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-780H-2L | 250W | 1.3GHz | 120V | SOT-957A | LDMOS | 22.7dB | 50V | 100mA | |
MRF8S9102NR3 | RF PFET ULTRA HIGH FREQUENCY B | Freescale Semiconductor | OM-780-2 | 28W | 865MHz ~ 960MHz | 70V | 10µA | OM-780-2 | LDMOS | 23.1dB | 28V | 750mA |
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