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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
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FDR8508P | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 3A | Logic Level Gate | 52mOhm @ 3A, 10V | 3V @ 250µA | 12nC @ 5V | 750pF @ 15V | PowerTrench® |
FDR8702H | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 3.6A, 2.6A | Logic Level Gate | 38mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 650pF @ 10V | PowerTrench® |
NDH8321C | P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW (Ta) | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 3.8A (Ta), 2.7A (Ta) | Standard | 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V | 1V @ 250µA | 28nC @ 4.5V, 23nC @ 4.5V | 700pF @ 10V, 865pF @ 10V | |
FDR8308P | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 3.2A | Logic Level Gate | 50mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 19nC @ 4.5V | 1240pF @ 10V | PowerTrench® |
NDH8502P | P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW (Ta) | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 2.2A (Ta) | Standard | 110mOhm @ 2.2A, 10V | 3V @ 250µA | 14.5nC @ 10V | 340pF @ 15V | |
NDH8521C | P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW (Ta) | Surface Mount | 8-LSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 3.8A (Ta), 2.7A (Ta) | Standard | 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V | 2V @ 250µA | 25nC @ 10V, 27nC @ 10V | 500pF @ 15V, 560pF @ 15V | |
NDH8302P | P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW (Ta) | Surface Mount | 8-LSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2A (Ta) | Standard | 130mOhm @ 2A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 515pF @ 10V | |
NDH8304P | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.7A | Logic Level Gate | 70mOhm @ 2.7A, 4.5V | 1V @ 250µA | 23nC @ 4.5V | 865pF @ 10V |
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