-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS8962C | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 7A, 5A | Logic Level Gate | 30mOhm @ 7A, 10V | 3V @ 250µA | 26nC @ 10V | 575pF @ 15V | PowerTrench® |
| FDS6912 | 6A, 30V, 0.028OHM, 2-ELEMENT, N | Fairchild Semiconductor | 8-SOIC | 2W (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 6A (Ta) | Logic Level Gate | 28mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 5V | 740pF @ 15V | PowerTrench® |
| NDS8947 | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 4A | Logic Level Gate | 65mOhm @ 4A, 10V | 2.8V @ 250µA | 30nC @ 10V | 690pF @ 15V | |
| SI9936DY | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 5A | Standard | 50mOhm @ 5A, 10V | 1V @ 250µA | 35nC @ 10V | 525pF @ 15V | |
| NDS8934 | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 3.8A | Logic Level Gate | 70mOhm @ 3.8A, 4.5V | 1V @ 250µA | 30nC @ 4.5V | 1120pF @ 10V | |
| HUFA76413DK8T | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 60V | 5.1A | Logic Level Gate | 49mOhm @ 5.1A, 10V | 3V @ 250µA | 23nC @ 10V | 620pF @ 25V | UltraFET™ |
| FDS6984AS | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 5.5A, 8.5A | Logic Level Gate | 31mOhm @ 5.5A, 10V | 3V @ 250µA | 11nC @ 10V | 420pF @ 15V | PowerTrench®, SyncFET™ |
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