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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
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Вид монтажа
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Package / Case
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Рабочая температура
|
Тип канала
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Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
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Rds On (Max) @ Id, Vgs
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Серия
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FQS4900TF | POWER FIELD-EFFECT TRANSISTOR, 1 | Fairchild Semiconductor | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 60V, 300V | 1.3A, 300mA | Standard | 550mOhm @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | QFET® | |
FDS8958A | POWER FIELD-EFFECT TRANSISTOR, 7 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | N and P-Channel | 30V | 7A, 5A | Logic Level Gate | 28mOhm @ 7A, 10V | 3V @ 250µA | 16nC @ 10V | 575pF @ 15V | PowerTrench® | |
FDS4895C | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 40V | 5.5A, 4.4A | Standard | 39mOhm @ 5.5A, 10V | 5V @ 250µA | 10nC @ 10V | 410pF @ 20V | PowerTrench® |
SSD2007ATF | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 50V | 2A | Logic Level Gate | 300mOhm @ 1.5A, 10V | 4V @ 250µA | 15nC @ 10V | ||
FDS6875 | POWER FIELD-EFFECT TRANSISTOR, 6 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 6A | Logic Level Gate | 30mOhm @ 6A, 4.5V | 1.5V @ 250µA | 31nC @ 5V | 2250pF @ 10V | PowerTrench® |
FDS6812A | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 6.7A | Logic Level Gate | 22mOhm @ 6.7A, 4.5V | 1.5V @ 250µA | 19nC @ 4.5V | 1082pF @ 10V | PowerTrench® |
FDS9934C | POWER FIELD-EFFECT TRANSISTOR, 6 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 6.5A, 5A | Logic Level Gate | 30mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 9nC @ 4.5V | 650pF @ 10V | |
SSD2025TF | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 60V | 3.3A | Logic Level Gate | 100mOhm @ 3.3A, 10V | 1V @ 250µA | 30nC @ 10V | ||
FDS6986S | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 6.5A, 7.9A | Logic Level Gate | 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V | 3V @ 250µA, 3V @ 1mA | 9nC @ 5V, 16nC @ 5V | 695pF @ 10V, 1233pF @ 10V | PowerTrench® |
FDS6993 | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V, 12V | 4.3A, 6.8A | Logic Level Gate | 55mOhm @ 4.3A, 10V | 3V @ 250µA | 7.7nC @ 5V | 530pF @ 15V | PowerTrench® |
FDS9945 | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 1W (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 60V | 3.5A (Ta) | Logic Level Gate | 100mOhm @ 3.5A, 10V | 3V @ 250µA | 13nC @ 5V | 420pF @ 30V | PowerTrench® |
RF1K4909396 | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 2W (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 12V | 2.5A (Ta) | Logic Level Gate | 130mOhm @ 2.5A, 5V | 2V @ 250µA | 24nC @ 10V | 775pF @ 10V | LittleFET™ |
NDS9936 | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 5A | Logic Level Gate | 50mOhm @ 5A, 10V | 3V @ 250µA | 35nC @ 10V | 525pF @ 15V | |
FDS9953A | POWER FIELD-EFFECT TRANSISTOR, 2 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 2.9A | Logic Level Gate | 130mOhm @ 1A, 10V | 3V @ 250µA | 3.5nC @ 10V | 185pF @ 15V | PowerTrench® |
FDS3601 | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 100V | 1.3A | Logic Level Gate | 480mOhm @ 1.3A, 10V | 4V @ 250µA | 5nC @ 10V | 153pF @ 50V | PowerTrench® |
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