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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
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Вид монтажа
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Package / Case
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Рабочая температура
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Тип канала
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Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
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Rds On (Max) @ Id, Vgs
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Серия
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FDS4897C | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 40V | 6.2A, 4.4A | Logic Level Gate | 29mOhm @ 6.2A, 10V | 3V @ 250µA | 20nC @ 10V | 760pF @ 20V | PowerTrench® |
NVMD3P03R2G | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 730mW (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 2.34A (Tj) | Standard | 85mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | |
NDS9933A | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.8A | Logic Level Gate | 140mOhm @ 2.8A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 405pF @ 10V | |
SI4953DY | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 4.9A (Ta) | 53mOhm @ 4.9A, 10V | 1V @ 250µA | 25nC @ 10V | 750pF @ 15V | ||
FDS8934A | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4A | Logic Level Gate | 55mOhm @ 4A, 4.5V | 1V @ 250µA | 28nC @ 5V | 1130pF @ 10V | |
FDS8949-F085 | POWER FIELD-EFFECT TRANSISTOR, 6 | Fairchild Semiconductor | 8-SOIC | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 40V | 6A | Logic Level Gate | 29mOhm @ 6A, 10V | 3V @ 250µA | 11nC @ 5V | 955pF @ 20V | Automotive, AEC-Q101, PowerTrench® |
FDS6994S | 6.9A, 30V, 0.021OHM, 2-ELEMENT, | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 6.9A, 8.2A | Logic Level Gate | 21mOhm @ 6.9A, 10V | 3V @ 250µA | 12nC @ 5V | 800pF @ 15V | PowerTrench®, SyncFET™ |
FDS4935BZ | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 900mW (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 6.9A (Ta) | Standard | 22mOhm @ 6.9A, 10V | 3V @ 250µA | 40nC @ 10V | 1360pF @ 15V | PowerTrench® |
FDS6894A | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 8A | Logic Level Gate | 17mOhm @ 8A, 4.5V | 1.5V @ 250µA | 24nC @ 4.5V | 1676pF @ 10V | PowerTrench® |
NDS9952A | POWER FIELD-EFFECT TRANSISTOR, 3 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 3.7A, 2.9A | Logic Level Gate | 80mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 320pF @ 10V | |
NDS9953A | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 2.9A | Logic Level Gate | 130mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 350pF @ 10V | |
FDS8936A | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 6A (Ta) | Standard | 28mOhm @ 6A, 10V | 3V @ 250µA | 27nC @ 10V | 650pF @ 15V | PowerTrench® |
FDS6930A | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 5.5A | Logic Level Gate | 40mOhm @ 5.5A, 10V | 3V @ 250µA | 7nC @ 5V | 460pF @ 15V | PowerTrench® |
FDS9933BZ | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.9A | Logic Level Gate | 46mOhm @ 4.9A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 985pF @ 10V | PowerTrench® |
SI4532DY | POWER FIELD-EFFECT TRANSISTOR, 3 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 3.9A, 3.5A | Standard | 65mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | 235pF @ 10V |
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