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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
|
Вид монтажа
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Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
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FDMS3604AS | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 1W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 30V | 13A, 23A | Logic Level Gate | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1695pF @ 15V | PowerTrench® |
FDMS3600S | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 2.2W (Ta), 2.5W (Ta) | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 25V | 15A (Ta), 30A (Tc), 30A (Ta), 40A (Tc) | Standard | 5.6mOhm @ 15A, 10V, 1.6mOhm @ 30A, 10V | 2.7V @ 250µA, 3V @ 1mA | 27nC @ 10V, 82nC @ 10V | 1680pF @13V, 5375pF @ 13V | PowerTrench® |
FDMS3615S | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 1W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 25V | 16A, 18A | Logic Level Gate | 5.8mOhm @ 16A, 10V | 2.5V @ 250µA | 27nC @ 10V | 1765pF @ 13V | PowerTrench® |
FDMS3606S | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 1W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 30V | 13A, 27A | Logic Level Gate | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1785pF @ 15V | PowerTrench® |
FDMS3624S | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 2.2W (Ta), 2.5W (Ta) | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 25V | 17.5A (Ta), 30A (Tc), 30A (Ta), 60A (Tc) | Standard | 1.8mOhm @ 30A, 10V, 5mOhm @ 17.5A, 10V | 2V @ 250µA, 2.2V @ 1mA | 26nC @ 10V, 59nC @ 10V | 1570pF @13V, 4045pF @ 13V | PowerTrench® |
FDWS9420-F085 | POWER FIELD-EFFECT TRANSISTOR | Fairchild Semiconductor | 8-PQFN (5x6) | 75W | Surface Mount | 8-PowerTDFN | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 40V | 20A (Tc) | Standard | 5.8mOhm @ 20A, 10V | 4V @ 250µA | 43nC @ 10V | 2100pF @ 20V | |
FDMS3616S | SMALL SIGNAL N-CHANNEL MOSFET | Fairchild Semiconductor | 8-PQFN (5x6) | 1W | Surface Mount | 8-PowerTDFN | 2 N-Channel (Dual) Asymmetrical | 25V | 16A, 18A | Logic Level Gate | 6.6mOhm @ 16A, 10V | 2.5V @ 250µA | 27nC @ 10V | 1765pF @ 13V | PowerTrench® | |
FDMS3606AS | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 1W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 30V | 13A, 27A | Logic Level Gate | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1695pF @ 15V | PowerTrench® |
FDMS3602AS | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 2.2W, 2.5W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 25V | 15A, 26A | Logic Level Gate | 5.6mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 10V | 1770pF @ 13V | PowerTrench® |
FDMS3600AS | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-PQFN (5x6) | 2.2W, 2.5W | Surface Mount | 8-PowerTDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 25V | 15A, 30A | Logic Level Gate | 5.6mOhm @ 15A, 10V | 2.7V @ 250µA | 27nC @ 10V | 1770pF @ 13V | PowerTrench® |
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