• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 61
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
EPC2025 GAN TRANS 300V 150MO BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 300V 4A (Ta) 150mOhm @ 3A, 5V 5V 2.5V @ 1mA 194pF @ 240V +6V, -4V eGaN®
EPC2037 GAN TRANS 100V 550MOHM BUMPED DI EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 1.7A (Ta) 550mOhm @ 100mA, 5V 5V 2.5V @ 80µA 0.12nC @ 5V 14pF @ 50V +6V, -4V eGaN®
EPC8010 GAN TRANS 100V 2.7A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 2.7A (Ta) 160mOhm @ 500mA, 5V 5V 2.5V @ 250µA 0.48nC @ 5V 55pF @ 50V +6V, -4V eGaN®
EPC2035 GANFET TRANS 60V 1A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 60V 1A (Ta) 45mOhm @ 1A, 5V 5V 2.5V @ 800µA 1.15nC @ 5V 115pF @ 30V +6V, -4V eGaN®
EPC2101 GAN TRANS ASYMMETRICAL HALF BRID EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 60V 9.5A, 38A GaNFET (Gallium Nitride) 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V eGaN®
EPC2053 TRANS GAN 100V DIE 4MOHM EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 48A 3.8mOhm @ 25A, 5V 5V 2.5V @ 9mA 14.8nC @ 5V 1895pF @ 50V +6V, -4V eGaN®
EPC2020 GANFET TRANS 60V 90A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 60V 90A (Ta) 2.2mOhm @ 31A, 5V 5V 2.5V @ 16mA 16nC @ 5V 1780pF @ 30V +6V, -4V eGaN®
EPC2031 GANFET NCH 60V 31A DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 60V 31A (Ta) 2.6mOhm @ 30A, 5V 2.5V @ 15mA 17nC @ 5V 1800pF @ 300V eGaN®
EPC2214 AEC-Q101 GAN FET 80V 20 MOHM EPC Die Surface Mount Die
EPC2105ENGRT GANFET 2NCH 80V 9.5A DIE EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 80V 9.5A GaNFET (Gallium Nitride) 14.5mOhm @ 20A, 5V 2.5V @ 2.5mA 2.5nC @ 5V 300pF @ 40V eGaN®
EPC2018 GANFET TRANS 150V 12A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) N-Channel 150V 12A (Ta) 25mOhm @ 6A, 5V 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V +6V, -5V eGaN®
EPC2016C GANFET TRANS 100V 18A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 18A (Ta) 16mOhm @ 11A, 5V 5V 2.5V @ 3mA 4.5nC @ 5V 420pF @ 50V +6V, -4V eGaN®
EPC2203 GANFET N-CH 80V 1.7A 6SOLDER BAR EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 80V 1.7A 80mOhm @ 1A, 5V 5V 2.5V @ 600µA 0.83nC @ 5V 88pF @ 50V +5.75V, -4V Automotive, AEC-Q101, eGaN®
EPC2029 GANFET TRANS 80V 31A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 80V 48A (Ta) 3.2mOhm @ 30A, 5V 5V 2.5V @ 12mA 13nC @ 5V 1410pF @ 40V +6V, -4V eGaN®
EPC2049ENGRT GANFET TRANS 40V BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 40V 16A (Ta) 5mOhm @ 15A, 5V 5V 2.5V @ 6mA 7.6nC @ 5V 805pF @ 20V +6V, -4V eGaN®
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