• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 61
  • EPC2025
    GAN TRANS 300V 150MO BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2037
    GAN TRANS 100V 550MOHM BUMPED DI
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 80µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC8010
    GAN TRANS 100V 2.7A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2035
    GANFET TRANS 60V 1A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 800µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2101
    GAN TRANS ASYMMETRICAL HALF BRID
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
    • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
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  • EPC2053
    TRANS GAN 100V DIE 4MOHM
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 48A
    • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 9mA
    • Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2020
    GANFET TRANS 60V 90A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 16mA
    • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 30V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2031
    GANFET NCH 60V 31A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 15mA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
    • Technology: GaNFET (Gallium Nitride)
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  • EPC2214
    AEC-Q101 GAN FET 80V 20 MOHM
    EPC
    • Manufacturer: EPC
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
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  • EPC2105ENGRT
    GANFET 2NCH 80V 9.5A DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 9.5A
    • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
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  • EPC2018
    GANFET TRANS 150V 12A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 125°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
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  • EPC2016C
    GANFET TRANS 100V 18A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2203
    GANFET N-CH 80V 1.7A 6SOLDER BAR
    EPC
    • Manufacturer: EPC
    • Series: Automotive, AEC-Q101, eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A
    • Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 600µA
    • Gate Charge (Qg) (Max) @ Vgs: 0.83nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +5.75V, -4V
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  • EPC2029
    GANFET TRANS 80V 31A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 12mA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 40V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2049ENGRT
    GANFET TRANS 40V BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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