• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 61
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
EPC2102 GAN TRANS SYMMETRICAL HALF BRIDG EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 60V 23A GaNFET (Gallium Nitride) 4.4mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V eGaN®
EPC2039 GANFET TRANS 80V BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 80V 6.8A (Ta) 25mOhm @ 6A, 5V 5V 2.5V @ 2mA 2.4nC @ 5V 210pF @ 40V +6V, -4V eGaN®
EPC2010 GANFET TRANS 200V 12A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) N-Channel 200V 12A (Ta) 25mOhm @ 6A, 5V 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V +6V, -4V eGaN®
EPC2023 GANFET TRANS 30V 60A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) N-Channel 30V 60A (Ta) 1.3mOhm @ 40A, 5V 2.5V @ 20mA 2300pF @ 15V eGaN®
EPC2101ENGRT GAN TRANS ASYMMETRICAL HALF BRID EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 60V 9.5A, 38A GaNFET (Gallium Nitride) 11.5mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V eGaN®
EPC2103ENGRT GANFET TRANS SYM HALF BRDG 80V EPC Die Surface Mount Die 2 N-Channel (Half Bridge) 80V 23A GaNFET (Gallium Nitride) 5.5mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 7600pF @ 40V eGaN®
EPC2031ENGRT GANFET NCH 60V 31A DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 60V 31A (Ta) 2.6mOhm @ 30A, 5V 5V 2.5V @ 15mA 17nC @ 5V 1800pF @ 300V +6V, -4V eGaN®
EPC2034C TRANS GAN 200V 8MOHM DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 200V 48A (Ta) 8mOhm @ 20A, 5V 5V 2.5V @ 7mA 11nC @ 5V 1140pF @ 100V +6V, -4V eGaN®
EPC2216 AEC-Q101 GAN FET 15 V EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 15V 10mA (Ta) Standard 26mOhm @ 1.5A, 5V 5V 1V @ 1mA 0.87nC @ 5V 118pF @ 7.5V +6V, -4V Automotive, AEC-Q101, eGaN®
EPC2033 GAN TRANS 150V 7MOHM BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) N-Channel 150V 31A (Ta) 7mOhm @ 25A, 5V 2.5V @ 9mA 10nC @ 5V 1140pF @ 75V eGaN®
EPC2021 GANFET TRANS 80V 90A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 80V 90A (Ta) 2.5mOhm @ 29A, 5V 5V 2.5V @ 14mA 15nC @ 5V 1650pF @ 40V +6V, -4V eGaN®
EPC2038 GAN TRANS 100V 2.8OHM BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 500mA (Ta) 3.3Ohm @ 50mA, 5V 5V 2.5V @ 20µA 0.044nC @ 5V 8.4pF @ 50V +6V, -4V eGaN®
EPC2034 GANFET TRANS 200V 48A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 200V 48A (Ta) 10mOhm @ 20A, 5V 5V 2.5V @ 7mA 8.8nC @ 5V 950pF @ 100V +6V, -4V eGaN®
EPC2051 GANFET TRANS 100V DIE CU PILLAR EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 1.7A 25mOhm @ 3A, 5V 5V 2.5V @ 1.5mA 2.1nC @ 5V 258pF @ 50V +6V, -4V eGaN®
EPC2110 GANFET 2NCH 120V 3.4A DIE EPC Die Die -40°C ~ 150°C (TJ) 2 N-Channel (Dual) Common Source 120V 3.4A GaNFET (Gallium Nitride) 60mOhm @ 4A, 5V 2.5V @ 700µA 0.8nC @ 5V 80pF @ 60V eGaN®
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