-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
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EPC2102 | GAN TRANS SYMMETRICAL HALF BRIDG | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 60V | 23A | GaNFET (Gallium Nitride) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | eGaN® | |||
EPC2039 | GANFET TRANS 80V BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 80V | 6.8A (Ta) | 25mOhm @ 6A, 5V | 5V | 2.5V @ 2mA | 2.4nC @ 5V | 210pF @ 40V | +6V, -4V | eGaN® | |
EPC2010 | GANFET TRANS 200V 12A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | N-Channel | 200V | 12A (Ta) | 25mOhm @ 6A, 5V | 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | +6V, -4V | eGaN® | |
EPC2023 | GANFET TRANS 30V 60A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | N-Channel | 30V | 60A (Ta) | 1.3mOhm @ 40A, 5V | 2.5V @ 20mA | 2300pF @ 15V | eGaN® | |||||
EPC2101ENGRT | GAN TRANS ASYMMETRICAL HALF BRID | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 60V | 9.5A, 38A | GaNFET (Gallium Nitride) | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | eGaN® | |||
EPC2103ENGRT | GANFET TRANS SYM HALF BRDG 80V | EPC | Die | Surface Mount | Die | 2 N-Channel (Half Bridge) | 80V | 23A | GaNFET (Gallium Nitride) | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | eGaN® | ||||
EPC2031ENGRT | GANFET NCH 60V 31A DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 60V | 31A (Ta) | 2.6mOhm @ 30A, 5V | 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | +6V, -4V | eGaN® | |
EPC2034C | TRANS GAN 200V 8MOHM DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 200V | 48A (Ta) | 8mOhm @ 20A, 5V | 5V | 2.5V @ 7mA | 11nC @ 5V | 1140pF @ 100V | +6V, -4V | eGaN® | |
EPC2216 | AEC-Q101 GAN FET 15 V | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 15V | 10mA (Ta) | Standard | 26mOhm @ 1.5A, 5V | 5V | 1V @ 1mA | 0.87nC @ 5V | 118pF @ 7.5V | +6V, -4V | Automotive, AEC-Q101, eGaN® |
EPC2033 | GAN TRANS 150V 7MOHM BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | N-Channel | 150V | 31A (Ta) | 7mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | eGaN® | ||||
EPC2021 | GANFET TRANS 80V 90A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 80V | 90A (Ta) | 2.5mOhm @ 29A, 5V | 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | +6V, -4V | eGaN® | |
EPC2038 | GAN TRANS 100V 2.8OHM BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 500mA (Ta) | 3.3Ohm @ 50mA, 5V | 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | +6V, -4V | eGaN® | |
EPC2034 | GANFET TRANS 200V 48A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 200V | 48A (Ta) | 10mOhm @ 20A, 5V | 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | +6V, -4V | eGaN® | |
EPC2051 | GANFET TRANS 100V DIE CU PILLAR | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 1.7A | 25mOhm @ 3A, 5V | 5V | 2.5V @ 1.5mA | 2.1nC @ 5V | 258pF @ 50V | +6V, -4V | eGaN® | |
EPC2110 | GANFET 2NCH 120V 3.4A DIE | EPC | Die | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) Common Source | 120V | 3.4A | GaNFET (Gallium Nitride) | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | eGaN® |
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