- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC2015 | GANFET TRANS 40V 33A BUMPED DIE | EPC | Die Outline (11-Solder Bar) | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 40V | 33A (Ta) | 4mOhm @ 33A, 5V | 5V | 2.5V @ 9mA | 11.6nC @ 5V | 1200pF @ 20V | +6V, -5V | eGaN® | |
| EPC2031ENGRT | GANFET NCH 60V 31A DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 60V | 31A (Ta) | 2.6mOhm @ 30A, 5V | 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | +6V, -4V | eGaN® | |
| EPC2034C | TRANS GAN 200V 8MOHM DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 200V | 48A (Ta) | 8mOhm @ 20A, 5V | 5V | 2.5V @ 7mA | 11nC @ 5V | 1140pF @ 100V | +6V, -4V | eGaN® | |
| EPC2216 | AEC-Q101 GAN FET 15 V | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 15V | 10mA (Ta) | Standard | 26mOhm @ 1.5A, 5V | 5V | 1V @ 1mA | 0.87nC @ 5V | 118pF @ 7.5V | +6V, -4V | Automotive, AEC-Q101, eGaN® |
| EPC2033 | GAN TRANS 150V 7MOHM BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | N-Channel | 150V | 31A (Ta) | 7mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | eGaN® | ||||
| EPC2021 | GANFET TRANS 80V 90A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 80V | 90A (Ta) | 2.5mOhm @ 29A, 5V | 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | +6V, -4V | eGaN® | |
| EPC2038 | GAN TRANS 100V 2.8OHM BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 500mA (Ta) | 3.3Ohm @ 50mA, 5V | 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | +6V, -4V | eGaN® | |
| EPC2014C | GANFET TRANS 40V 10A BUMPED DIE | EPC | Die Outline (5-Solder Bar) | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 40V | 10A (Ta) | 16mOhm @ 10A, 5V | 5V | 2.5V @ 2mA | 2.5nC @ 5V | 300pF @ 20V | +6V, -4V | eGaN® | |
| EPC2034 | GANFET TRANS 200V 48A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 200V | 48A (Ta) | 10mOhm @ 20A, 5V | 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | +6V, -4V | eGaN® | |
| EPC2051 | GANFET TRANS 100V DIE CU PILLAR | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 1.7A | 25mOhm @ 3A, 5V | 5V | 2.5V @ 1.5mA | 2.1nC @ 5V | 258pF @ 50V | +6V, -4V | eGaN® | |
| EPC2110 | GANFET 2NCH 120V 3.4A DIE | EPC | Die | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) Common Source | 120V | 3.4A | GaNFET (Gallium Nitride) | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | eGaN® | ||||
| EPC2025 | GAN TRANS 300V 150MO BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 300V | 4A (Ta) | 150mOhm @ 3A, 5V | 5V | 2.5V @ 1mA | 194pF @ 240V | +6V, -4V | eGaN® | ||
| EPC2037 | GAN TRANS 100V 550MOHM BUMPED DI | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 1.7A (Ta) | 550mOhm @ 100mA, 5V | 5V | 2.5V @ 80µA | 0.12nC @ 5V | 14pF @ 50V | +6V, -4V | eGaN® | |
| EPC8010 | GAN TRANS 100V 2.7A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 2.7A (Ta) | 160mOhm @ 500mA, 5V | 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | +6V, -4V | eGaN® | |
| EPC2035 | GANFET TRANS 60V 1A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 60V | 1A (Ta) | 45mOhm @ 1A, 5V | 5V | 2.5V @ 800µA | 1.15nC @ 5V | 115pF @ 30V | +6V, -4V | eGaN® |
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