• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
Найдено: 2429
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
DMC2025UFDBQ-7 MOSFET BVDSS: 8V~24V U-DFN2020-6 Diodes Incorporated U-DFN2020-6 (Type B) 700mW (Ta) Surface Mount 6-UDFN Exposed Pad -55°C ~ 150°C (TJ) N and P-Channel Complementary 20V 6A (Ta), 3.5A (Ta) Standard 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V 1V @ 250µA, 1.4V @ 250µA 12.3nC @ 10V, 15nC @ 8V 486pF @ 10V, 642pF @ 10V Automotive, AEC-Q101
DMN60H080DS-13 MOSFET N-CH 600V 80MA SOT23 Diodes Incorporated SOT-23-3 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.1W (Ta) 600V 80mA (Ta) 100Ohm @ 60mA, 10V 4.5V, 10V 3V @ 250µA 1.7nC @ 10V 25pF @ 25V ±20V
ZXMN10A25GTA MOSFET N-CH 100V 2.9A SOT223 Diodes Incorporated SOT-223 Surface Mount TO-261-4, TO-261AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2W (Ta) 100V 2.9A (Ta) 125mOhm @ 2.9A, 10V 10V 4V @ 250µA 17nC @ 10V 859pF @ 50V ±20V
DMN3013LFG-13 MOSFET BVDSS: 25V-30V POWERDI333 Diodes Incorporated PowerDI3333-8 (Type D) 2.16W (Ta) Surface Mount 8-PowerLDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 9.5A (Ta), 15A (Tc) Standard 14.3mOhm @ 4A, 8V 1.2V @ 250µA 5.7nC @ 4.5V 600pF @ 15V
ZVP1320ASTOA MOSFET P-CH 200V 0.07A TO92-3 Diodes Incorporated E-Line (TO-92 compatible) Through Hole E-Line-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 625mW (Ta) 200V 70mA (Ta) 80Ohm @ 50mA, 10V 10V 3.5V @ 1mA 50pF @ 25V ±20V
DMTH8012LK3Q-13 MOSFET NCH 80V 50A TO252 Diodes Incorporated TO-252, (D-Pak) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 2.6W (Ta) 80V 50A (Tc) 16mOhm @ 12A, 10V 4.5V, 10V 3V @ 250µA 46.8nC @ 10V 2051pF @ 40V ±20V Automotive, AEC-Q101
BSS8402DW-7-F MOSFET N/P-CH 60V/50V SC70-6 Diodes Incorporated SOT-363 200mW Surface Mount 6-TSSOP, SC-88, SOT-363 -55°C ~ 150°C (TJ) N and P-Channel 60V, 50V 115mA, 130mA Logic Level Gate 7.5Ohm @ 50mA, 5V 2.5V @ 250µA 50pF @ 25V
DMN3033LSNQ-7 MOSFET N-CH 30V 6A SC59-3 Diodes Incorporated SC-59 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.4W (Ta) 30V 6A (Ta) 30mOhm @ 6A, 10V 4.5V, 10V 2.1V @ 250µA 10.5nC @ 5V 755pF @ 10V ±20V
ZVP4424A MOSFET P-CH 240V 0.2A TO92-3 Diodes Incorporated TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 750mW (Ta) 240V 200mA (Ta) 9Ohm @ 200mA, 10V 3.5V, 10V 2V @ 1mA 200pF @ 25V ±40V
DMN4031SSDQ-13 MOSFET 2N-CH 40V 5.2A 8SOIC Diodes Incorporated 8-SO 1.42W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 40V 5.2A Standard 31mOhm @ 6A, 10V 3V @ 250µA 18.6nC @ 10V 945pF @ 20V
DMP2240UW-7 MOSFET P-CH 20V 1.5A SC70-3 Diodes Incorporated SOT-323 Surface Mount SC-70, SOT-323 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 250mW (Ta) 20V 1.5A (Ta) 150mOhm @ 2A, 4.5V 1.8V, 4.5V 1V @ 250µA 320pF @ 16V ±12V
ZXMP6A17DN8QTC MOSFET BVDSS: 41V~60V SO-8 T&R 2 Diodes Incorporated 8-SO 1.25W (Ta) Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 60V 2.7A (Ta) Standard 125mOhm @ 2.3A, 10V 1V @ 250µA 17.7nC @ 10V 637pF @ 30V
BSS84DWQ-7 BSS FAMILY SOT363 T&R 3K Diodes Incorporated SOT-363 300mW (Ta) Surface Mount 6-TSSOP, SC-88, SOT-363 -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 50V 130mA (Ta) Standard 10Ohm @ 100mA, 5V 2V @ 1mA 45pF @ 25V Automotive, AEC-Q101
DMN6022SSS-13 MOSFET BVDSS: 41V-60V SO-8 Diodes Incorporated 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N-Channel 6.9A (Ta) 29mOhm @ 5A, 10V 3V @ 250µA
DMT12H007LPS-13 MOSFET 101V~250V POWERDI5060-8 Diodes Incorporated PowerDI5060-8 Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.9W 120V 90A (Tc) 7.8mOhm @ 30A, 10V 4.5V, 10V 2.5V @ 250µA 49nC @ 10V 3224pF @ 60V ±20V Automotive, AEC-Q101