• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 2429
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
DMN61D8L-7 MOSFET N-CH 60V 0.47A SOT23 Diodes Incorporated SOT-23 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 390mW (Ta) 60V 470mA (Ta) 1.8Ohm @ 150mA, 5V 3V, 5V 2V @ 1mA 0.74nC @ 5V 12.9pF @ 12V ±12V
DMN2040LSD-13 MOSFET 2N-CH 20V 7A 8-SOIC Diodes Incorporated 8-SOP 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 7A Logic Level Gate 26mOhm @ 6A, 4.5V 1.2V @ 250µA 562pF @ 10V
ZVN0540ASTZ MOSFET N-CH 400V 0.09A TO92-3 Diodes Incorporated E-Line (TO-92 compatible) Through Hole E-Line-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 700mW (Ta) 400V 90mA (Ta) 50Ohm @ 100mA, 10V 10V 3V @ 1mA 70pF @ 25V ±20V
DMP6350S-13 MOSFET PCH 60V 1.5A SOT23 Diodes Incorporated SOT-23 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 720mW (Ta) 60V 1.5A (Ta) 350mOhm @ 900mA, 10V 4.5V, 10V 3V @ 250µA 4.1nC @ 10V 206pF @ 30V ±20V Automotive, AEC-Q101
ZVN2110A MOSFET N-CH 100V 320MA TO92-3 Diodes Incorporated TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 700mW (Ta) 100V 320mA (Ta) 4Ohm @ 1A, 10V 10V 2.4V @ 1mA 75pF @ 25V ±20V
DMN10H120SE-13 MOSFET N-CH 100V 3.6A SOT223 Diodes Incorporated SOT-223 Surface Mount TO-261-4, TO-261AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.3W (Ta) 100V 3.6A (Ta) 110mOhm @ 3.3A, 10V 6V, 10V 3V @ 250µA 10nC @ 10V 549pF @ 50V ±20V
DMN3025LFDF-13 MOSFET N-CH 30V 9.9A UDFN2020-6 Diodes Incorporated U-DFN2020-6 (Type F) Surface Mount 6-UDFN Exposed Pad MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.1W (Ta) 30V 9.9A (Ta) 20.5mOhm @ 7A, 10V 4.5V, 10V 2V @ 250µA 13.2nC @ 10V 641pF @ 15V ±20V
ZXMN3A02X8TC MOSFET N-CH 30V 5.3A 8MSOP Diodes Incorporated 8-MSOP Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.1W (Ta) 30V 5.3A (Ta) 25mOhm @ 12A, 10V 4.5V, 10V 1V @ 250µA 26.8nC @ 10V 1400pF @ 25V ±20V
DMP4025SFG-7 MOSFET P-CH 40V 4.65A POWERDI Diodes Incorporated PowerDI3333-8 Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 810mW (Ta) 40V 4.65A (Ta) 25mOhm @ 3A, 10V 4.5V, 10V 1.8V @ 250µA 14nC @ 4.5V 1643pF @ 20V ±20V
ZXMP3A17DN8TA MOSFET 2P-CH 30V 3.4A 8-SOIC Diodes Incorporated 8-SO 2.1W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 30V 4.4A (Ta) Standard 70mOhm @ 3.2A, 10V 1V @ 250µA 8.28nC @ 5V 630pF @ 15V
DMN2015UFDF-7 MOSFET N-CH 20V 15.2A UDFN2020-6 Diodes Incorporated U-DFN2020-6 Surface Mount 6-UDFN Exposed Pad MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.8W (Ta) 20V 15.2A (Ta) 9mOhm @ 8.5A, 4.5V 1.5V, 4.5V 1.2V @ 250µA 42.3nC @ 10V 1439pF @ 10V ±12V
DMN3016LDV-7 MOSFET 2 N-CH 21A POWERDI3333-8 Diodes Incorporated PowerDI3333-8 Surface Mount 8-PowerVDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 21A (Tc) Standard 12mOhm @ 7A, 10V 2V @ 250µA 9.5nC @ 4.5V 1184pF @ 15V
ZVNL120A MOSFET N-CH 200V 180MA TO92-3 Diodes Incorporated TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 700mW (Ta) 200V 180mA (Ta) 10Ohm @ 250mA, 5V 3V, 5V 1.5V @ 1mA 85pF @ 25V ±20V
DMT10H015LSS-13 MOSFET N-CH 100V 8.3A Diodes Incorporated 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.2W (Ta) 100V 8.3A (Ta) 16mOhm @ 20A, 10V 4.5V, 10V 3.5V @ 250µA 33.3nC @ 10V 1871pF @ 50V ±20V
DMN61D9UW-7 MOSFET N-CH 60V 0.34A Diodes Incorporated SOT-323 Surface Mount SC-70, SOT-323 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 320mW (Ta) 60V 340mA (Ta) 2Ohm @ 50mA, 5V 1.8V, 5V 1V @ 250µA 0.4nC @ 4.5V 28.5pF @ 30V ±20V
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