• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
Найдено: 2429
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
DMN1008UFDF-7 MOSFET N-CH30V SC-59 Diodes Incorporated U-DFN2020-6 (Type F) Surface Mount 6-UDFN Exposed Pad MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 700mW (Ta) 12V 12.2A (Ta) 8mOhm @ 5A, 4.5V 2.5V, 4.5V 1V @ 250µA 23.4nC @ 8V 995pF @ 6V ±8V Automotive, AEC-Q101
ZXMP3A16N8TA MOSFET P-CH 30V 5.6A 8-SOIC Diodes Incorporated 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.9W (Ta) 30V 5.6A (Ta) 40mOhm @ 4.2A, 10V 4.5V, 10V 1V @ 250µA 29.6nC @ 10V 1022pF @ 15V ±20V
DMN63D1LW-7 MOSFET N-CH 60V 0.38A SOT323 Diodes Incorporated SOT-323 Surface Mount SC-70, SOT-323 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 310mW (Ta) 60V 380mA (Ta) 2Ohm @ 500mA, 10V 5V, 10V 2.5V @ 1mA 0.3nC @ 4.5V 30pF @ 25V ±20V
ZVP3306ASTOB MOSFET P-CH 60V 0.16A TO92-3 Diodes Incorporated E-Line (TO-92 compatible) Through Hole E-Line-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 625mW (Ta) 60V 160mA (Ta) 14Ohm @ 200mA, 10V 10V 3.5V @ 1mA 50pF @ 18V ±20V
DMN31D5L-13 MOSFET BVDSS: 25V-30V SOT23 T&R Diodes Incorporated SOT-23 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 350mW (Ta) 30V 500mA (Ta) 1.5Ohm @ 10mA, 4V 2.5V, 4V 1.6V @ 250µA 1.2nC @ 10V 50pF @ 15V ±20V
DMN5010VAK-7 MOSFET 2N-CH 50V 0.28A SOT-563 Diodes Incorporated SOT-563 250mW Surface Mount SOT-563, SOT-666 -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 50V 280mA Logic Level Gate 2Ohm @ 50mA, 5V 1V @ 250µA 50pF @ 25V
DMS3016SFG-7 MOSFET N-CH 30V 7A PWRDI3333-8 Diodes Incorporated PowerDI3333-8 Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 980mW (Ta) 30V 7A (Ta) Schottky Diode (Body) 13mOhm @ 11.2A, 10V 4.5V, 10V 2.2V @ 250µA 44.6nC @ 10V 1886pF @ 15V ±12V
DMTH4001SPS-13 MOSFET 31V~40V POWERDI5060-8 Diodes Incorporated PowerDI5060-8 (Type K) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 3.09W (Ta), 187.5W (Tc) 40V 100A (Tc) 1mOhm @ 30A, 10V 10V 4V @ 250µA 187nC @ 10V 14023pF @ 20V ±20V
DMG3420U-7 MOSFET N-CH 20V 5.47A SOT23 Diodes Incorporated SOT-23-3 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 740mW (Ta) 20V 5.47A (Ta) 29mOhm @ 6A, 10V 1.8V, 10V 1.2V @ 250µA 5.4nC @ 4.5V 434.7pF @ 10V ±12V
DMN6040SFDEQ-7 MOSFET BVDSS: 41V-60V U-DFN2020- Diodes Incorporated U-DFN2020-6 (Type E) Surface Mount 6-PowerUDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 660mW (Ta) 60V 5.3A (Ta) 38mOhm @ 4.3A, 10V 4.5V, 10V 3V @ 250µA 22.4nC @ 10V 1287pF @ 25V ±20V Automotive, AEC-Q101
DMN2056U-13 MOSFET N-CHANNEL 20V 4A SOT23-3 Diodes Incorporated SOT-23-3 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 940mW 20V 4A (Ta) 38mOhm @ 3.6A, 4.5V 1.5V, 4.5V 1V @ 250µA 4.3nC @ 4.5V 339pF @ 10V ±8V
ZVN3320ASTOB MOSFET N-CH 200V 0.1A TO92-3 Diodes Incorporated E-Line (TO-92 compatible) Through Hole E-Line-3 MOSFET (Metal Oxide) N-Channel 625mW (Ta) 200V 100mA (Ta) 25Ohm @ 100mA, 10V 10V 3V @ 1mA 45pF @ 25V ±20V
DMN3055LFDB-7 MOSFET 2 N-CH 5A UDFN2020-6 Diodes Incorporated U-DFN2020-6 (Type B) Surface Mount 6-UDFN Exposed Pad -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 5A (Ta) Standard 40mOhm @ 3A, 4.5V 1.5V @ 250µA 5.3nC @ 4.5V 458pF @ 15V
ZXM64P03XTC MOSFET P-CH 30V 3.8A 8MSOP Diodes Incorporated 8-MSOP Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.1W (Ta) 30V 3.8A (Ta) 75mOhm @ 2.4A, 10V 4.5V, 10V 1V @ 250µA 46nC @ 10V 825pF @ 25V ±20V
DMP2900UW-7 MOSFET BVDSS: 8V-24V SOT323 Diodes Incorporated