• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 2429
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
DMN2028UFDF-7 MOSFET N-CH 20V 7.9A U-DFN2020-6 Diodes Incorporated U-DFN2020-6 (Type F) Surface Mount 6-UDFN Exposed Pad MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 660mW (Ta) 20V 7.9A (Ta) 25mOhm @ 4A, 4.5V 1.5V, 4.5V 1V @ 250µA 18nC @ 8V 907pF @ 10V ±8V
DMN61D8LVT-13 MOSFET 2N-CH 60V 0.63A TSOT26 Diodes Incorporated TSOT-26 820mW Surface Mount SOT-23-6 Thin, TSOT-23-6 -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 60V 630mA Logic Level Gate 1.8Ohm @ 150mA, 5V 2V @ 1mA 0.74nC @ 5V 12.9pF @ 12V
DMP210DUDJ-7 MOSFET 2P-CH 20V 0.2A SOT-963 Diodes Incorporated SOT-963 330mW Surface Mount SOT-963 -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 200mA Logic Level Gate 5.5Ohm @ 100mA, 4.5V 1.15V @ 250µA 27.44pF @ 15V
DMN67D8LDW-13 MOSFET 2N-CH 60V 0.23A SOT363 Diodes Incorporated SOT-363 320mW Surface Mount 6-TSSOP, SC-88, SOT-363 -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 60V 230mA Standard 5Ohm @ 500mA, 10V 2.5V @ 250µA 0.82nC @ 10V 22pF @ 25V
DMC25D0UVT-13 MOSFET N/P-CH 25V/30V TSOT26 Diodes Incorporated TSOT-23-6 1.2W Surface Mount SOT-23-6 Thin, TSOT-23-6 -55°C ~ 150°C (TJ) N and P-Channel 25V, 30V 400mA, 3.2A Standard 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.7nC @ 8V 26.2pF @ 10V
DMG3402LQ-7 MOSFET BVDSS: 25V-30V SOT23 Diodes Incorporated SOT-23 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.4W 30V 4A (Ta) 52mOhm @ 4A, 10V 2.5V, 10V 1.4V @ 250µA 11.7nC @ 10V 464pF @ 15V ±12V Automotive, AEC-Q101
DMC3025LSD-13 MOSFET N/P-CH 30V 6.5A/4.2A 8SO Diodes Incorporated 8-SO 1.2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 30V 6.5A, 4.2A Logic Level Gate 20mOhm @ 7.4A, 10V 2V @ 250µA 9.8nC @ 10V 501pF @ 15V
DMP2104LP-7 MOSFET P-CH 20V 1.5A 3-DFN Diodes Incorporated 3-DFN1411 (1.4x1.1) Surface Mount 3-XDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 500mW (Ta) 20V 1.5A (Ta) 150mOhm @ 950mA, 4.5V 1.8V, 4.5V 1V @ 250µA 320pF @ 16V ±12V
DMP2006UFGQ-7 MOSFET BVDSS: 8V-24V POWERDI3333 Diodes Incorporated PowerDI3333-8 Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.3W (Ta), 41W (Tc) 20V 17.5A (Ta), 40A (Tc) 5.5mOhm @ 15A, 4.5V 1.5V, 4.5V 1V @ 250µA 200nC @ 10V 7500pF @ 10V ±10V Automotive, AEC-Q101
DMN26D0UDJ-7 MOSFET 2N-CH 20V 0.24A SOT963 Diodes Incorporated SOT-963 300mW Surface Mount SOT-963 -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 240mA Logic Level Gate 3Ohm @ 100mA, 4.5V 1.05V @ 250µA 14.1pF @ 15V
DMT32M5LPS-13 MOSFET N-CH 30V 150A POWERDI5060 Diodes Incorporated PowerDI5060-8 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 100W (Tc) 30V 150A (Tc) 2mOhm @ 30A, 10V 4.5V, 10V 3V @ 1mA 68nC @ 10V 3944pF @ 25V ±20V
DMS3016SSS-13 MOSFET N-CH 30V 9.8A 8SO Diodes Incorporated 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.54W (Ta) 30V 9.8A (Ta) Schottky Diode (Body) 13mOhm @ 9.8A, 10V 4.5V, 10V 2.3V @ 250µA 43nC @ 10V 1849pF @ 15V ±12V
DMNH6008SCTQ MOSFET NCH 60V 130A TO220AB Diodes Incorporated TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 210W (Tc) 60V 130A (Tc) 8mOhm @ 20A, 10V 10V 4V @ 250µA 21nC @ 10V 2596pF @ 30V -20V Automotive, AEC-Q101
DMN3013LDG-13 MOSFET BVDSS: 25V-30V POWERDI333 Diodes Incorporated PowerDI3333-8 (Type D) 2.16W (Ta) Surface Mount 8-PowerLDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 9.5A (Ta), 15A (Tc) Standard 14.3mOhm @ 4A, 8V 1.2V @ 250µA 5.7nC @ 4.5V 600pF @ 15V
DMN2400UFB4-7R MOSFET N-CH SOT23 Diodes Incorporated
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