• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 2429
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
DMP3015LSS-13 MOSFET P-CH 30V 13A 8-SOIC Diodes Incorporated 8-SOP Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta) 30V 13A (Ta) 11mOhm @ 13A, 10V 4.5V, 10V 2V @ 250µA 60.4nC @ 10V 2748pF @ 20V ±20V
ZVN4310ASTZ MOSFET N-CH 100V 0.9A TO92-3 Diodes Incorporated E-Line (TO-92 compatible) Through Hole E-Line-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 850mW (Ta) 100V 900mA (Ta) 500mOhm @ 3A, 10V 5V, 10V 3V @ 1mA 350pF @ 25V ±20V
DMN62D0UDWQ-7 MOSFET BVDSS: 41V~60V SOT363 T&R Diodes Incorporated SOT-363 320mW (Ta) Surface Mount 6-TSSOP, SC-88, SOT-363 -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 60V 350mA (Ta) Standard 2Ohm @ 100mA, 4.5V 1.1V @ 250µA 0.5nC @ 4.5V 32pF @ 30V Automotive, AEC-Q101
DMP21D0UFB-7 MOSFET P-CH 20V 0.77A DFN1006-3 Diodes Incorporated 3-X1DFN1006 Surface Mount 3-UFDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 430mW (Ta) 20V 770mA (Ta) 495mOhm @ 400mA, 4.5V 1.8V, 4.5V 700mV @ 250µA 1.5nC @ 8V 76.5pF @ 10V ±8V
DMC3071LVT-7 MOSFET BVDSS: 25V-30V TSOT26 T&R Diodes Incorporated TSOT-26 700mW (Ta) Surface Mount SOT-23-6 Thin, TSOT-23-6 -55°C ~ 150°C (TJ) N and P-Channel Complementary 30V 4.6A (Ta), 3.3A (Ta) Standard 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V 2.5V @ 250µA 4.5nC @ 10V, 6.5nC @ 10V 190pF @ 15V, 254pF @ 15V
DMN10H170SK3-13 MOSFET N-CH 100V 12A TO252 Diodes Incorporated TO-252-3 Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 42W (Tc) 100V 12A (Tc) 140mOhm @ 5A, 10V 4.5V, 10V 3V @ 250µA 9.7nC @ 10V 1167pF @ 25V ±20V
DMP3028LK3-13 MOSFET P-CH 30V 27A TO252 Diodes Incorporated TO-252 Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.6W (Ta) 30V 27A (Tc) 25mOhm @ 7A, 10V 4.5V, 10V 2.4V @ 250µA 22nC @ 10V 1241pF @ 15V ±20V
BSS127SSN-7 MOSFET N-CH 600V 50MA SC59 Diodes Incorporated SC-59 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 610mW (Ta) 600V 50mA (Ta) 160Ohm @ 16mA, 10V 5V, 10V 4.5V @ 250µA 1.08nC @ 10V 21.8pF @ 25V ±20V
DMP3050LVT-7 MOSFET P CH 30V 4.5A TSOT26 Diodes Incorporated TSOT-26 Surface Mount SOT-23-6 Thin, TSOT-23-6 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.8W (Ta) 30V 4.5A (Ta) 50mOhm @ 4.5A, 10V 4.5V, 10V 2V @ 250µA 10.5nC @ 10V 620pF @ 15V ±25V
BSS123-7 MOSFET N-CH 100V 170MA SOT23-3 Diodes Incorporated SOT-23-3 Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 300mW (Ta) 100V 170mA (Ta) 6Ohm @ 170mA, 10V 10V 2V @ 1mA 60pF @ 25V ±20V
DMT3009LFVW-13 MOSFET BVDSS: 25V 30V POWERDI333 Diodes Incorporated PowerDI3333-8 (Type UX) Surface Mount, Wettable Flank 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.3W (Ta) 30V 12A (Ta), 50A (Tc) 11mOhm @ 14.4A, 10V 3.8V, 10V 3V @ 250µA 12nC @ 10V 823pF @ 15V ±20V
DMT6012LPS-13 MOSFET N-CH 60V POWERDI Diodes Incorporated
DMN3009LFV-7 MOSFET N-CH 30V 60A POWERDI3333 Diodes Incorporated PowerDI3333-8 Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2W (Ta) 30V 60A (Tc) 5.5mOhm @ 30A, 10V 4.5V, 10V 3V @ 250µA 42nC @ 10V 2000pF @ 15V ±20V
DMN4031SSD-13 MOSFET 2N-CH 40V 5.2A 8SO Diodes Incorporated 8-SO 1.42W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 40V 5.2A Logic Level Gate 31mOhm @ 6A, 10V 3V @ 250µA 18.6nC @ 10V 945pF @ 20V
DMN2991UDA-7B MOSFET 8V~24V X2-DFN0806-6 Diodes Incorporated X2-DFN0806-6 310mW (Ta) Surface Mount 6-SMD, No Lead -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 450mA (Ta) Standard 990mOhm @ 100mA, 4.5V 1V @ 250µA 350pC @ 4.5V 21.5pF @ 16V
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