- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
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Вид монтажа
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Частота
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Номинальное напряжение
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Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
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CMPDM202PH BK | MOSFET P-CH 20V SOT-23F | Central Semiconductor Corp | SOT-23F | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 350mW (Ta) | 20V | 2.3A (Ta) | 88mOhm @ 1.2A, 5V | 2.5V, 5V | 1.4V @ 250µA | 12nC @ 5V | 800pF @ 10V | 12V | ||||||||||
CMPDM303NH BK | MOSFET N-CH 30V SOT-23F | Central Semiconductor Corp | SOT-23F | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 350mW (Ta) | 30V | 3.6A (Ta) | 40mOhm @ 1.8A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | 12V | ||||||||||
CWDM305N TR13 PBFREE | MOSFET N-CH 30V 5.8A 8SOIC | Central Semiconductor Corp | 8-SOIC | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2W (Ta) | 30V | 5.8A (Ta) | 30mOhm @ 2.9A, 10V | 5V, 10V | 3V @ 250µA | 6.3nC @ 5V | 560pF @ 10V | -20V | ||||||||||
CTLDM303N-M832DS BK | MOSFET DUAL N-CHANNEL | Central Semiconductor Corp | TLM832DS | 1.65W | Surface Mount | 8-TDFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 3.6A (Ta) | Standard | 40mOhm @ 1.8A, 4.5V | 1.25V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | ||||||||||||
CXDM4060P TR PBFREE | MOSFET P-CH 40V 6A SOT-89 | Central Semiconductor Corp | SOT-89 | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.2W (Ta) | 40V | 6A (Ta) | 65mOhm @ 6A, 10V | 4.5V, 10V | 3V @ 250µA | 6.5nC @ 4.5V | 750pF @ 25V | 25V | ||||||||||
CP373-CTLDM303N-WN | MOSFET TRANSISTOR N-CH CHIP | Central Semiconductor Corp | Die | Surface Mount | Die | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 30V | 3.6A (Ta) | 78mOhm @ 1.8A, 2.5V | 2.5V, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | 12V | |||||||||||
CTLDM303N-M832DS TR | MOSFET 2N-CH 30V 3.6A TLM832DS | Central Semiconductor Corp | TLM832DS | 1.65W | Surface Mount | 8-TDFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 3.6A | Standard | 40mOhm @ 1.8A, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | ||||||||||||
CDM2208-800FP SL PBFREE | MOSFET N-CH 8A 800V TO-220FP | Central Semiconductor Corp | TO-220FP | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 57W (Tc) | 800V | 8A (Tc) | 1.6Ohm @ 4A, 10V | 10V | 4V @ 250µA | 24.45nC @ 10V | 1110pF @ 25V | 30V | ||||||||||
CTLDM7120-M621H TR | MOSFET N-CH 20V 1A | Central Semiconductor Corp | TLM621H | Surface Mount | 6-XFDFN Exposed Pad | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | N-Channel | 1.6W (Ta) | 20V | 1A (Ta) | 100mOhm @ 500mA, 4.5V | 1.5V, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 220pF @ 10V | -8V | ||||||||||
CMLDM8005 TR PBFREE | MOSFET 2P-CH 20V 0.65A SOT563 | Central Semiconductor Corp | SOT-563 | 350mW | Surface Mount | SOT-563, SOT-666 | -65°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 650mA | Logic Level Gate | 360mOhm @ 350mA, 4.5V | 1V @ 250µA | 1.2nC @ 4.5V | 100pF @ 16V | ||||||||||||
2N5485 | RF MOSFET N-CH JFET 15V TO-92 | Central Semiconductor Corp | TO-92-3 | 25V | 10mA | TO-226-3, TO-92-3 (TO-226AA) | N-Channel JFET | 20dB | 2.5dB | 15V | 4mA | ||||||||||||||||
CTLDM7120-M832DS TR | MOSFET 2N-CH 20V 1A | Central Semiconductor Corp | TLM832DS | 1.65W | Surface Mount | 8-TDFN Exposed Pad | -65°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 1A (Ta) | Logic Level Gate | 100mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 220pF @ 10V | ||||||||||||
CMPDM7002AG BK PBFREE | MOSFET N-CH 60V 0.28A SOT-23 | Central Semiconductor Corp | SOT-23 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | N-Channel | 350mW (Ta) | 60V | 280mA (Ta) | 2Ohm @ 500mA, 10V | 5V, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 50pF @ 25V | 40V | ||||||||||
CTLDM8002A-M621H TR | MOSFET N-CH 50V DFN6 | Central Semiconductor Corp | TLM621H | Surface Mount | 6-XFDFN Exposed Pad | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | P-Channel | 1.6W (Ta) | 50V | 280mA (Ta) | 2.5Ohm @ 500mA, 10V | 5V, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 70pF @ 25V | -20V | ||||||||||
CMXDM7002A BK PBFREE | MOSFET 2N-CH 60V 0.28A SOT26 | Central Semiconductor Corp | SOT-26 | 350mW (Ta) | Surface Mount | SOT-23-6 | -65°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 60V | 280mA (Ta) | Standard | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.592nC @ 4.5V | 50pF @ 25V |
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