- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CP398X-CPDM303NH-CT | MOSFET TRANSISTOR N-CH CHIP | Central Semiconductor Corp | Die | Surface Mount | Die | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 30V | 3.6A (Ta) | 78mOhm @ 1.8A, 2.5V | 2.5V, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | 12V | |||||||||||
| CMPDM203NH TR | MOSFET N-CH 20V 3.2A SOT-23F | Central Semiconductor Corp | SOT-23F | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 350mW (Ta) | 20V | 3.2A (Ta) | 50mOhm @ 1.6A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 10nC @ 4.5V | 395pF @ 10V | 12V | ||||||||||
| CDM7-650 TR13 PBFREE | MOSFET N-CH 7A 650V DPAK | Central Semiconductor Corp | DPAK | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.12W (Ta), 140W (Tc) | 650V | 7A (Ta) | 1.5Ohm @ 3.5A, 10V | 10V | 4V @ 250µA | 16.8nC @ 10V | 754pF @ 25V | 30V | ||||||||||
| CTLDM8120-M832DS BK | MOSFET DUAL N-CHANNEL | Central Semiconductor Corp | TLM832DS | 1.65W | Surface Mount | 8-TDFN Exposed Pad | -65°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 860mA (Ta) | Standard | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | 3.56nC @ 4.5V | 200pF @ 16V | ||||||||||||
| CP398X-CTLDM303N-CT | MOSFET TRANSISTOR N-CH CHIP | Central Semiconductor Corp | Die | Surface Mount | Die | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 30V | 3.6A (Ta) | 78mOhm @ 1.8A, 2.5V | 2.5V, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | 12V | |||||||||||
| CMLDM7120G TR PBFREE | MOSFET N-CH 20V 1A SOT563 | Central Semiconductor Corp | SOT-563 | Surface Mount | SOT-563, SOT-666 | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | N-Channel | 150mW (Ta) | 20V | 1A (Ta) | 100mOhm @ 500mA, 4.5V | 1.5V, 4V | 1.2V @ 1mA | 2.4nC @ 4.5V | 220pF @ 10V | -8V | ||||||||||
| CTLDM7120-M832D TR | TRANSISTOR | Central Semiconductor Corp | TLM832D | 1.65W | Surface Mount | 8-TDFN Exposed Pad | -65°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 1A | Logic Level Gate | 100mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 220pF @ 10V | ||||||||||||
| CEDM7001VL TR PBFREE | MOSFET N-CH 20V 0.1A SOT883 | Central Semiconductor Corp | SOT-883VL | Surface Mount | SC-101, SOT-883 | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | N-Channel | 100mW (Ta) | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.5V, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 9pF @ 3V | -10V | ||||||||||
| CMLDM7002AJ TR PBFREE | MOSFET 2N-CH 60V 0.28A SOT563 | Central Semiconductor Corp | SOT-563 | 350mW | Surface Mount | SOT-563, SOT-666 | -65°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 60V | 280mA | Standard | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 50pF @ 25V | ||||||||||||
| CEDM7001 TR PBFREE | MOSFET N-CH 20V 0.1A SOT-883 | Central Semiconductor Corp | SOT-883 | Surface Mount | SC-101, SOT-883 | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | N-Channel | 100mW (Ta) | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.5V, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 9pF @ 3V | -10V | ||||||||||
| CTLDM7181-M832D TR | TRANSISTOR | Central Semiconductor Corp | TLM832D | 1.65W | Surface Mount | 8-TDFN Exposed Pad | -65°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 1A | Standard | 100mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 220pF @ 10V | ||||||||||||
| CMPDM7003 TR PBFREE | MOSFET N-CH 50V 280MA SOT23 | Central Semiconductor Corp | SOT-23 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | N-Channel | 350mW (Ta) | 50V | 280mA (Ta) | 2Ohm @ 50mA, 5V | 1.8V, 10V | 1V @ 250µA | 0.76nC @ 4.5V | 50pF @ 25V | 12V | ||||||||||
| CP398X-CPDM303-CT20 | MOSFET TRANSISTOR N-CH CHIP | Central Semiconductor Corp | |||||||||||||||||||||||||
| CDM4-650 TR13 PBFREE | MOSFET N-CH 4A 650V DPAK | Central Semiconductor Corp | DPAK | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 620mW (Ta), 77W (Tc) | 650V | 4A (Ta) | 2.7Ohm @ 2A, 10V | 10V | 4V @ 250µA | 11.4nC @ 10V | 463pF @ 25V | 30V | ||||||||||
| 2N7002 TR PBFREE | MOSFET N-CH 60V 0.115A SOT-23 | Central Semiconductor Corp | SOT-23 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | N-Channel | 350mW (Ta) | 60V | 115mA (Tc) | 7.5Ohm @ 500mA, 10V | 5V, 10V | 2.5V @ 250µA | 50pF @ 25V | 40V |
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