-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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| AON2405 | MOSFET P-CH 20V 8A 6DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.8W (Ta) | 20V | 8A (Ta) | 32mOhm @ 8A, 4.5V | 1.5V, 4.5V | 900mV @ 250µA | 18nC @ 4.5V | 1025pF @ 10V | ±8V | |
| AON2408 | MOSFET N CH 20V 8A DFN 2x2B | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 20V | 8A (Ta) | 14.5mOhm @ 8A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 7nC @ 4.5V | 782pF @ 10V | ±12V | |
| AON2707 | MOSFET P-CH 30V 4A DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-WDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.8W (Ta) | 30V | 4A (Ta) | Schottky Diode (Isolated) | 117mOhm @ 4A, 10V | 2.5V, 10V | 1.5V @ 250µA | 12nC @ 10V | 305pF @ 15V | ±12V |
| AON2290 | MOSFET N CH 100V 4.5A DFN 2X2B | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 100V | 4.5A (Ta) | 72mOhm @ 4.5A, 10V | 4.5V, 10V | 2.8V @ 250µA | 12nC @ 10V | 415pF @ 50V | ±20V | |
| AON2240 | MOSFET N-CH 40V 8A 6DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 40V | 8A (Ta) | 21mOhm @ 8A, 10V | 4.5V, 10V | 2.4V @ 250µA | 12nC @ 10V | 415pF @ 20V | ±20V | |
| AON2406 | MOSFET N-CH 20V 8A 6LDFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 20V | 8A (Ta) | 12.5mOhm @ 8A, 4.5V | 1.5V, 4.5V | 1V @ 250µA | 18nC @ 4.5V | 1140pF @ 10V | ±8V | |
| AON2403 | MOSFET P-CH 12V 8A DFN2X2B | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.8W (Ta) | 12V | 8A (Ta) | 21mOhm @ 8A, 4.5V | 1.5V, 4.5V | 900mV @ 250µA | 18nC @ 4.5V | 1370pF @ 6V | ±8V | |
| AON2260 | MOSFET N CH 60V 6A DFN 2x2B | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 60V | 6A (Ta) | 44mOhm @ 6A, 10V | 4.5V, 10V | 2.5V @ 250µA | 12nC @ 10V | 426pF @ 30V | ±20V | |
| AON2401 | MOSFET P-CH 8V 8A 6DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.8W (Ta) | 8V | 8A (Ta) | 22mOhm @ 8A, 2.5V | 1.2V, 2.5V | 650mV @ 250µA | 18nC @ 4.5V | 1465pF @ 4V | ±5V | |
| AON2407 | MOSFET P-CH 30V 6.3A 6DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.8W (Ta) | 30V | 6.3A (Ta) | 37.5mOhm @ 6.3A, 10V | 2.5V, 10V | 1.5V @ 250µA | 21nC @ 10V | 746pF @ 15V | ±12V | |
| AON2420 | MOSFET N-CH 30V 8A 6LDFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 30V | 8A (Ta) | 11.7mOhm @ 8A, 10V | 4.5V, 10V | 2.2V @ 250µA | 12nC @ 10V | 552pF @ 15V | ±20V | |
| AON2705 | MOSFET P-CH 30V 3A 6DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-WDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.5W (Ta) | 30V | 3A (Ta) | Schottky Diode (Body) | 108mOhm @ 3A, 10V | 4.5V, 10V | 2.3V @ 250µA | 6nC @ 10V | 180pF @ 15V | ±20V |
| AON2409 | MOSFET P-CH 30V 8A 6DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.8W (Ta) | 30V | 8A (Ta) | 32mOhm @ 8A, 10V | 4.5V, 10V | 2.3V @ 250µA | 14.5nC @ 10V | 530pF @ 15V | ±20V | |
| AON2701 | MOSFET P-CH 20V 3A 6DFN | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-WDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.5W (Ta) | 20V | 3A (Ta) | Schottky Diode (Isolated) | 120mOhm @ 3A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 700pF @ 10V | ±8V |
| AON2410 | MOSFET N CH 30V 8A DFN 2x2B | Alpha & Omega Semiconductor Inc. | 6-DFN-EP (2x2) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 30V | 8A (Ta) | 21mOhm @ 8A, 4.5V | 2.5V, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | 813pF @ 15V | ±12V |
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