• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
Найдено: 125
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Пороговое напряжение затвора (Max) @ Id
Входная емкость (Ciss) (Max) @ Vds
Серия
ALD1115PAL MOSFET N/P-CH 10.6V 8DIP Advanced Linear Devices Inc. 8-PDIP 500mW Through Hole 8-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) N and P-Channel Complementary 10.6V Standard 1800Ohm @ 5V 1V @ 1µA 3pF @ 5V
ALD1102BSAL MOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc. 8-SOIC 500mW Surface Mount 8-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 2 P-Channel (Dual) Matched Pair 10.6V Standard
ALD310704ASCL MOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. 16-SOIC 500mW Surface Mount 16-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C 4 P-Channel, Matched Pair 8V Standard 380mV @ 1µA 2.5pF @ 5V EPAD®, Zero Threshold™
ALD110904PAL MOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. 8-PDIP 500mW Through Hole 8-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA Standard 500Ohm @ 4.4V 420mV @ 1µA 2.5pF @ 5V EPAD®
ALD212908ASAL MOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. 8-SOIC 500mW Surface Mount 8-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V 80mA Logic Level Gate 20mV @ 10µA EPAD®, Zero Threshold™