• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 125
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Пороговое напряжение затвора (Max) @ Id
Входная емкость (Ciss) (Max) @ Vds
Серия
ALD110908ASAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. 8-SOIC 500mW Surface Mount 8-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA Standard 500Ohm @ 4.8V 810mV @ 1µA 2.5pF @ 5V EPAD®
ALD110804SCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. 16-SOIC 500mW Surface Mount 16-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 4 N-Channel, Matched Pair 10.6V 12mA, 3mA Standard 500Ohm @ 4.4V 420mV @ 1µA 2.5pF @ 5V EPAD®
ALD110814SCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. 16-SOIC 500mW Surface Mount 16-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 4 N-Channel, Matched Pair 10.6V 12mA, 3mA Standard 500Ohm @ 5.4V 1.42V @ 1µA 2.5pF @ 5V EPAD®
ALD114804APCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. 16-PDIP 500mW Through Hole 16-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) 4 N-Channel, Matched Pair 10.6V 12mA, 3mA Depletion Mode 500Ohm @ 3.6V 380mV @ 1µA 2.5pF @ 5V EPAD®
ALD210802PCL MOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. 16-PDIP 500mW Through Hole 16-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) 4 N-Channel, Matched Pair 10.6V 80mA Logic Level Gate 20mV @ 10µA EPAD®, Zero Threshold™
ALD110908APAL MOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. 8-PDIP 500mW Through Hole 8-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA Standard 500Ohm @ 4.8V 810mV @ 1µA 2.5pF @ 5V EPAD®
ALD212914PAL MOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. 8-PDIP 500mW Through Hole 8-DIP (0.300", 7.62mm) 2 N-Channel (Dual) Matched Pair 10.6V 80mA Logic Level Gate 20mV @ 10µA EPAD®, Zero Threshold™
ALD210808ASCL MOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. 16-SOIC 500mW Surface Mount 16-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 4 N-Channel, Matched Pair 10.6V 80mA Logic Level Gate 20mV @ 10µA EPAD®, Zero Threshold™
ALD110800APCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. 16-PDIP 500mW Through Hole 16-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) 4 N-Channel, Matched Pair 10.6V Standard 500Ohm @ 4V 10mV @ 1µA 2.5pF @ 5V EPAD®, Zero Threshold™
ALD114935SAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. 8-SOIC 500mW Surface Mount 8-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA Depletion Mode 540Ohm @ 0V 3.45V @ 1µA 2.5pF @ 5V EPAD®
ALD114813SCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. 16-SOIC 500mW Surface Mount 16-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 4 N-Channel, Matched Pair 10.6V 12mA, 3mA Depletion Mode 500Ohm @ 2.7V 1.26V @ 1µA 2.5pF @ 5V EPAD®
ALD110902SAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. 8-SOIC 500mW Surface Mount 8-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V Standard 500Ohm @ 4.2V 220mV @ 1µA 2.5pF @ 5V EPAD®
ALD110902PAL MOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. 8-PDIP 500mW Through Hole 8-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V Standard 500Ohm @ 4.2V 220mV @ 1µA 2.5pF @ 5V EPAD®
ALD212900PAL MOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. 8-PDIP 500mW Through Hole 8-DIP (0.300", 7.62mm) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V 80mA Logic Level Gate 14Ohm 20mV @ 20µA 30pF @ 5V EPAD®, Zero Threshold™
ALD212908SAL MOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. 8-SOIC 500mW Surface Mount 8-SOIC (0.154", 3.90mm Width) 0°C ~ 70°C (TJ) 2 N-Channel (Dual) Matched Pair 10.6V 80mA Logic Level Gate 20mV @ 10µA EPAD®, Zero Threshold™
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