- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ALD114804SCL | MOSFET 4N-CH 10.6V 16SOIC | Advanced Linear Devices Inc. | 16-SOIC | 500mW | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | Depletion Mode | 500Ohm @ 3.6V | 360mV @ 1µA | 2.5pF @ 5V | EPAD® |
| ALD114904PAL | MOSFET 2N-CH 10.6V 8DIP | Advanced Linear Devices Inc. | 8-PDIP | 500mW | Through Hole | 8-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | Depletion Mode | 500Ohm @ 3.6V | 360mV @ 1µA | 2.5pF @ 5V | EPAD® |
| ALD210800APCL | MOSFET 4N-CH 10.6V 0.08A 16DIP | Advanced Linear Devices Inc. | 16-PDIP | 500mW | Through Hole | 16-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | 80mA | Logic Level Gate | 25Ohm | 10mV @ 10µA | 15pF @ 5V | EPAD®, Zero Threshold™ |
| ALD110802PCL | MOSFET 4N-CH 10.6V 16DIP | Advanced Linear Devices Inc. | 16-PDIP | 500mW | Through Hole | 16-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | Standard | 500Ohm @ 4.2V | 220mV @ 1µA | 2.5pF @ 5V | EPAD® | |
| ALD110808APCL | MOSFET 4N-CH 10.6V 16DIP | Advanced Linear Devices Inc. | 16-PDIP | 500mW | Through Hole | 16-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | Standard | 500Ohm @ 4.8V | 810mV @ 1µA | 2.5pF @ 5V | EPAD® |
| ALD1116PAL | MOSFET 2N-CH 10.6V 8DIP | Advanced Linear Devices Inc. | 8-PDIP | 500mW | Through Hole | 8-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 2 N-Channel (Dual) Matched Pair | 10.6V | Standard | 500Ohm @ 5V | 1V @ 1µA | 3pF @ 5V | ||
| ALD114813PCL | MOSFET 4N-CH 10.6V 16DIP | Advanced Linear Devices Inc. | 16-PDIP | 500mW | Through Hole | 16-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | Depletion Mode | 500Ohm @ 2.7V | 1.26V @ 1µA | 2.5pF @ 5V | EPAD® |
| ALD210800SCL | MOSFET 4N-CH 10.6V 0.08A 16SOIC | Advanced Linear Devices Inc. | 16-SOIC | 500mW | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | 80mA | Logic Level Gate | 25Ohm | 20mV @ 10µA | 15pF @ 5V | EPAD®, Zero Threshold™ |
| ALD210808PCL | MOSFET 4N-CH 10.6V 0.08A 16DIP | Advanced Linear Devices Inc. | 16-PDIP | 500mW | Through Hole | 16-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | 80mA | Logic Level Gate | 20mV @ 10µA | EPAD®, Zero Threshold™ | ||
| ALD1102BPAL | MOSFET 2P-CH 10.6V 8DIP | Advanced Linear Devices Inc. | 8-PDIP | 500mW | Through Hole | 8-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 2 P-Channel (Dual) Matched Pair | 10.6V | Standard | 270Ohm @ 5V | 1.2V @ 10µA | 10pF @ 5V | ||
| ALD114904APAL | MOSFET 2N-CH 10.6V 8DIP | Advanced Linear Devices Inc. | 8-PDIP | 500mW | Through Hole | 8-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | Depletion Mode | 500Ohm @ 3.6V | 380mV @ 1µA | 2.5pF @ 5V | EPAD® |
| ALD1105SBL | MOSFET 2N/2P-CH 10.6V 14SOIC | Advanced Linear Devices Inc. | 14-SOIC | 500mW | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 0°C ~ 70°C (TJ) | 2 N and 2 P-Channel Matched Pair | 10.6V | Standard | 500Ohm @ 5V | 1V @ 1µA | 3pF @ 5V | ||
| ALD110904SAL | MOSFET 2N-CH 10.6V 8SOIC | Advanced Linear Devices Inc. | 8-SOIC | 500mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 0°C ~ 70°C (TJ) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | Standard | 500Ohm @ 4.4V | 420mV @ 1µA | 2.5pF @ 5V | EPAD® |
| ALD1101PAL | MOSFET 2N-CH 10.6V 8DIP | Advanced Linear Devices Inc. | 8-PDIP | 500mW | Through Hole | 8-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 2 N-Channel (Dual) Matched Pair | 10.6V | Standard | 75Ohm @ 5V | 1V @ 10µA | |||
| ALD1101SAL | MOSFET 2N-CH 10.6V 8SOIC | Advanced Linear Devices Inc. | 8-SOIC | 500mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 0°C ~ 70°C (TJ) | 2 N-Channel (Dual) Matched Pair | 10.6V | Standard | 75Ohm @ 5V | 1V @ 10µA |
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