• Тип корпуса
    • Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Серия
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Списком Таблицей
Найдено: 253
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
PN4209 TRANS PNP 15V 0.2A TO92-3 Central Semiconductor Corp TO-226-3, TO-92-3 (TO-226AA) 200mA 15V 625mW Through Hole PNP -65°C ~ 150°C (TJ) TO-92-3 600mV @ 5mA, 50mA 10nA 50 @ 10mA, 300mV 850MHz
2N3903 TRANS NPN 40V 0.2A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50 @ 10mA, 1V
2N4125BU TRANS PNP 30V 0.2A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 200mA 30V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 400mV @ 5mA, 50mA 50nA (ICBO) 50 @ 2mA, 1V
2N4125TFR TRANS PNP 30V 0.2A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 30V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 400mV @ 5mA, 50mA 50nA (ICBO) 50 @ 2mA, 1V
2N5551 T-NPN SI- HIV AMP NTE Electronics, Inc TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 160V 625mW Through Hole NPN TO-92 200mV @ 5mA, 50mA 80 @ 10mA, 5V 300MHz
2N4124 T-NPN SI- GEN PUR AMP NTE Electronics, Inc TO-226-3, TO-92-3 (TO-226AA) 200mA 25V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 300MHz
2N3904NLBU TRANS NPN 40V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 100 @ 10mA, 1V 300MHz
MPS2369G TRANS NPN 15V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body 200mA 15V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 (TO-226) 250mV @ 1mA, 10mA 400nA 40 @ 10mA, 1V
2N3906_D27ZS00Z TRANS PNP 40V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 40V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 400mV @ 5mA, 50mA 100 @ 10mA, 1V 250MHz
2N4126TFR TRANS PNP 25V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 25V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 400mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 250MHz
2N3906_J61Z TRANS PNP 40V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 40V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 400mV @ 5mA, 50mA 100 @ 10mA, 1V 250MHz
2N4123RLRM SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 30V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 50 @ 2mA, 1V 250MHz
2N5830 SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 200mA 100V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 250mV @ 5mA, 50mA 50nA (ICBO) 80 @ 10mA, 5V
2N3903 SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50 @ 10mA, 1V
MPS4124 TRANS NPN 25V 0.2A TO-92 Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 200mA 25V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 170MHz
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