• Тип корпуса
    • Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Серия
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Списком Таблицей
Найдено: 253
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
2N4264 PBFREE TRANS NPN 15V 0.2A TO92 Central Semiconductor Corp TO-226-3, TO-92-3 (TO-226AA) 200mA 15V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 350mV @ 10mA, 100mA 40 @ 30mA, 1V 350MHz
2N4124TF TRANS NPN 25V 0.2A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 25V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 300MHz
MPSA18G TRANS NPN 45V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body 200mA 45V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 (TO-226) 300mV @ 5mA, 50mA 50nA (ICBO) 500 @ 10mA, 5V 160MHz
2N3904_J18Z TRANS NPN 40V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 100 @ 10mA, 1V 300MHz
MPS6515_D74Z TRANS NPN 25V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 25V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 500mV @ 5mA, 50mA 50nA (ICBO) 250 @ 2mA, 10V
PN4917_D27Z TRANS PNP 30V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 30V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 25nA 150 @ 10mA, 1V
MPSL51_D75Z TRANS PNP 100V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 100V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 1µA (ICBO) 40 @ 50mA, 5V 60MHz
2N4126TAR TRANS PNP 25V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 25V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 400mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 250MHz
2N3904RLRA TRANS NPN 40V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 (TO-226) 200mV @ 1mA, 10mA 50nA 40 @ 100µA, 1V 300MHz
2N3906RLRA TRANS PNP 40V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 200mA 40V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92 (TO-226) 250mV @ 1mA, 10mA 50nA 100 @ 10mA, 1V 250MHz
MPSA18RLRAG SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 45V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 500 @ 10mA, 5V 160MHz
2N3904CTA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 100 @ 10mA, 1V 300MHz
MPS6513 SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 200mA 30V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 500mV @ 5mA, 50mA 50nA (ICBO) 90 @ 2mA, 10V
2N4410 SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 200mA 80V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 200mV @ 100µA, 1mA 10nA (ICBO) 60 @ 10mA, 1V
2N6428ATA SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 50V 625mW Through Hole NPN 150°C (TJ) TO-92-3 600mV @ 5mA, 100mA 25nA 250 @ 100µA, 5V 700MHz
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