• Тип корпуса
    • Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Серия
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Списком Таблицей
Найдено: 253
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
2N3904 TRANS NPN 40V 0.2A TO92 Diotec Semiconductor TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 300mV @ 5mA, 50mA 50nA 100 @ 10mA, 1V 300MHz
2N3904 TRANS NPN 40V 0.2A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA 100 @ 10mA, 1V 300MHz
MPS4126RLRA TRANS PNP 25V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 200mA 25V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92 (TO-226) 400mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 170MHz
2N3906RLRAG TRANS PNP 40V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 200mA 40V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92 (TO-226) 400mV @ 5mA, 50mA 100 @ 10mA, 1V 250MHz
2N4410_D75Z TRANS NPN 80V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 80V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 200mV @ 100µA, 1mA 10nA (ICBO) 60 @ 10mA, 1V
2N4123TFR TRANS NPN 30V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 30V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 50 @ 2mA, 1V 250MHz
2N4124TFR TRANS NPN 25V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 25V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 300MHz
2N4124 TRANS NPN 25V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body 200mA 25V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 (TO-226) 300mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 300MHz
MPS4126RLRAG TRANS PNP 25V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 200mA 25V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92 (TO-226) 400mV @ 5mA, 50mA 50nA (ICBO) 120 @ 2mA, 1V 170MHz
MPS6513_D74Z TRANS NPN 30V 0.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 30V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 500mV @ 5mA, 50mA 50nA (ICBO) 90 @ 2mA, 10V
2N3904RL1G TRANS NPN 40V 0.2A TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 (TO-226) 300mV @ 5mA, 50mA 100 @ 10mA, 1V 300MHz
2N3904G SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 100 @ 10mA, 1V 300MHz
MPSA18RLRMG SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 45V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 300mV @ 5mA, 50mA 50nA (ICBO) 500 @ 10mA, 5V 160MHz
2N3905TFR SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 200mA 40V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 400mV @ 5mA, 50mA 50 @ 10mA, 1V
2N3904PH TRANS NPN 40V 0.2A TO92-3 Vishay General Semiconductor - Diodes Division TO-226-3, TO-92-3 (TO-226AA) 200mA 40V 625mW Through Hole NPN TO-92-3 300mV @ 5mA, 50mA 100 @ 10mA, 1V 300MHz
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