• Тип корпуса
    • Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Серия
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Списком Таблицей
Найдено: 33
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Серия
FMMT560QTA TRANS PNP 500V 0.15A SOT23-3 Diodes Incorporated TO-236-3, SC-59, SOT-23-3 150mA 500V 500mW Surface Mount PNP -55°C ~ 150°C (TJ) SOT-23-3 500mV @ 10mA, 50mA 100nA 80 @ 50mA, 10V 60MHz
FMMT560QTC SS HI VOLTAGE TRANSISTOR SOT23 T Diodes Incorporated TO-236-3, SC-59, SOT-23-3 150mA 500V 500mW Surface Mount PNP -55°C ~ 150°C (TJ) SOT-23-3 500mV @ 10mA, 50mA 100nA (ICBO) 100 @ 1mA, 10V 60MHz Automotive, AEC-Q101
FMMT558TA TRANS PNP 400V 0.15A SOT23-3 Diodes Incorporated TO-236-3, SC-59, SOT-23-3 150mA 400V 500mW Surface Mount PNP -55°C ~ 150°C (TJ) SOT-23-3 500mV @ 6mA, 50mA 100nA 100 @ 50mA, 10V 50MHz
FMMT560TA TRANS PNP 500V 0.15A SOT23-3 Diodes Incorporated TO-236-3, SC-59, SOT-23-3 150mA 500V 500mW Surface Mount PNP -55°C ~ 150°C (TJ) SOT-23-3 500mV @ 10mA, 50mA 100nA 80 @ 50mA, 10V 60MHz
2PC1815GR,126 TRANS NPN 50V 0.15A TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole NPN 150°C (TJ) TO-92-3 300mV @ 10mA, 100mA 100nA (ICBO) 200 @ 2mA, 6V 80MHz
2PC1815Y,126 TRANS NPN 50V 0.15A TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole NPN 150°C (TJ) TO-92-3 300mV @ 10mA, 100mA 100nA (ICBO) 120 @ 2mA, 6V 80MHz
2PC1815Y,412 TRANS NPN 50V 0.15A TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole NPN 150°C (TJ) TO-92-3 300mV @ 10mA, 100mA 100nA (ICBO) 120 @ 2mA, 6V 80MHz
2PC1815GR,116 TRANS NPN 50V 0.15A TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole NPN 150°C (TJ) TO-92-3 300mV @ 10mA, 100mA 100nA (ICBO) 200 @ 2mA, 6V 80MHz
2PA1015Y,126 TRANS PNP 50V 0.15A TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole PNP 150°C (TJ) TO-92-3 300mV @ 10mA, 100mA 100nA (ICBO) 120 @ 2mA, 6V 80MHz
2PC1815BL,126 TRANS NPN 50V 0.15A TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole NPN 150°C (TJ) TO-92-3 300mV @ 10mA, 100mA 100nA (ICBO) 350 @ 2mA, 6V 80MHz
2PA1015GR,126 TRANS PNP 50V 0.15A TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole PNP 150°C (TJ) TO-92-3 300mV @ 10mA, 100mA 100nA (ICBO) 200 @ 2mA, 6V 80MHz
2SC536NG-NPA-AT TRANS NPN 50V 0.15A TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 150mA 50V 500mW Through Hole NPN 150°C (TJ) TO-92 (TO-226) 300mV @ 10mA, 100mA 100nA (ICBO) 280 @ 1mA, 6V 200MHz
2SC536NF-NPA-AT SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole NPN 150°C (TJ) TO-226AA 300mV @ 10mA, 100mA 100nA (ICBO) 160 @ 1mA, 6V 200MHz
KTC3198-O A1G TRANSISTOR, NPN, 50V, 0.15A, 200 Taiwan Semiconductor Corporation TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 150mA 50V 500mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 250mV @ 10mA, 100mA 100nA (ICBO) 70 @ 2mA, 6V 80MHz
KTC3198-GR B1G TRANSISTOR, NPN, 50V, 0.15A, 120 Taiwan Semiconductor Corporation TO-226-3, TO-92-3 (TO-226AA) 150mA 50V 500mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92 250mV @ 10mA, 100mA 100nA (ICBO) 70 @ 2mA, 6V 80MHz
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