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- Тип корпуса
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Серия
Наименование | Описание | Производитель
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Package / Case
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Ток коллектора (макс)
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Граничное напряжение КЭ(макс)
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Мощность - Макс.
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Вид монтажа
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Тип транзистора
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Рабочая температура
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Тип корпуса
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Серия
|
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BC857BR TR PBFREE | TRANS PNP 45V 0.1A SOT23 | Central Semiconductor Corp | TO-236-3, SC-59, SOT-23-3 | 100mA | 45V | 350mW | Surface Mount | PNP | -65°C ~ 150°C (TJ) | SOT-23 | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 100MHz | |
BC182LB | TRANS NPN 50V 0.1A TO92-3 | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) | 100mA | 50V | 350mW | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-92-3 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 40 @ 10µA, 5V | 150MHz | |
MMBT2484 | TRANS NPN 60V 0.1A SOT23-3 | Fairchild Semiconductor | TO-236-3, SC-59, SOT-23-3 | 100mA | 60V | 350mW | Surface Mount | NPN | -55°C ~ 150°C (TJ) | SOT-23-3 | 350mV @ 100µA, 1mA | 10nA (ICBO) | 100 @ 10µA, 5V | ||
PMP4501QASZ | TRANS 2NPN DFN1010B-6 | Nexperia USA Inc. | 6-XFDFN Exposed Pad | 100mA | 45V | 350mW | Surface Mount | 2 NPN (Dual) | DFN1010B-6 | ||||||
BC182L_J35Z | TRANS NPN 50V 0.1A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 100mA | 50V | 350mW | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-92-3 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 120 @ 2mA, 5V | 150MHz | |
BCW60A | TRANS NPN 32V 0.1A SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 100mA | 32V | 350mW | Surface Mount | NPN | SOT-23-3 | 550mV @ 1.25mA, 50mA | 20nA | 120 @ 2mA, 5V | 125MHz | ||
BCW61BMTF | TRANS PNP 32V 0.1A SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 100mA | 32V | 350mW | Surface Mount | PNP | SOT-23-3 | 550mV @ 1.25mA, 50mA | 20nA | 140 @ 2mA, 5V | |||
BC184_J35Z | TRANS NPN 30V 0.1A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 100mA | 30V | 350mW | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-92-3 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 130 @ 100mA, 5V | 150MHz | |
BC212B | TRANS PNP 50V 0.1A TO92 | onsemi | TO-226-3, TO-92-3 Long Body | 100mA | 50V | 350mW | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92 (TO-226) | 600mV @ 5mA, 100mA | 15nA (ICBO) | 60 @ 2mA, 5V | 280MHz | |
BC307BRL1G | TRANS PNP 45V 0.1A TO92 | onsemi | TO-226-3, TO-92-3 Long Body (Formed Leads) | 100mA | 45V | 350mW | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92 (TO-226) | 250mV @ 5mA, 100mA | 15nA | 200 @ 2mA, 5V | 280MHz | |
BC212LB_J35Z | TRANS PNP 50V 0.1A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 100mA | 50V | 350mW | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92-3 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 60 @ 2mA, 5V | ||
BC182L_D74Z | TRANS NPN 50V 0.1A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 100mA | 50V | 350mW | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-92-3 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 120 @ 2mA, 5V | 150MHz | |
BC307BZL1G | TRANS PNP 45V 0.1A TO92 | onsemi | TO-226-3, TO-92-3 Long Body (Formed Leads) | 100mA | 45V | 350mW | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92 (TO-226) | 250mV @ 5mA, 100mA | 15nA | 200 @ 2mA, 5V | 280MHz | |
BC307BZL1G | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 100mA | 45V | 350mW | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92-3 | 250mV @ 5mA, 100mA | 15nA | 200 @ 2mA, 5V | 280MHz | |
BC847BT116 | TRANS NPN 45V 0.1A SST3 | Rohm Semiconductor | TO-236-3, SC-59, SOT-23-3 | 100mA | 45V | 350mW | Surface Mount | NPN | 150°C (TJ) | SST3 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200MHz |
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