- Мощность - Макс.
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
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- Тип корпуса
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Серия
Наименование | Описание | Производитель
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Package / Case
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Ток коллектора (макс)
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Граничное напряжение КЭ(макс)
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Мощность - Макс.
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Вид монтажа
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Тип транзистора
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Рабочая температура
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Тип корпуса
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Напряжение насыщения (макс) @ Ib, Ic
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Обратный ток коллектора
|
Усиление по току (hFE)
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Граничная частота
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Серия
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2N3791 PBFREE | TRANS PNP 60V 10A TO-3 | Central Semiconductor Corp | TO-204AA, TO-3 | 10A | 60V | 150W | Through Hole | PNP | -65°C ~ 200°C (TJ) | TO-3 | 1V @ 500mA, 5A | 50 @ 1A, 2V | 4MHz | ||
2N6671 | TRANS PNP 300V 8A TO3 | Microchip Technology | TO-204AA, TO-3 | 8A | 300V | 150W | Through Hole | PNP | TO-3 | 10 @ 8A, 300V | |||||
JANTX2N6058 | TRANS NPN DARL 80V 12A TO-3 | Microsemi Corporation | TO-204AA, TO-3 | 12A | 80V | 150W | Through Hole | NPN - Darlington | -55°C ~ 175°C (TJ) | TO-3 | 3V @ 120mA, 12A | 1mA | 1000 @ 6A, 3V | Military, MIL-PRF-19500/502 | |
JAN2N1016B | TRANS NPN 100V 7.5A TO82 | Microsemi Corporation | 7.5A | 100V | 150W | NPN | -65°C ~ 150°C (TJ) | TO-82 | 2.5V @ 1A, 5A | 1mA | 20 @ 2A, 4V | Military, MIL-PRF-19500/102 | |||
2N1016D | TRANS NPN 200V 7.5A TO82 | Microsemi Corporation | 7.5A | 200V | 150W | NPN | -65°C ~ 150°C (TJ) | TO-82 | 2.5V @ 1A, 5A | 1mA | 6 @ 7.5A, 4V | ||||
2N6609 | T-PNP SI-AF PO | NTE Electronics, Inc | TO-204AA, TO-3 | 16A | 140V | 150W | Through Hole | PNP | -65°C ~ 200°C (TJ) | TO-204 (TO-3) | 4V @ 3.2A, 16A | 10mA | 15 @ 8A, 4V | ||
2N3773 | T-NPN SI- PWR AUDIO SW | NTE Electronics, Inc | TO-204AA, TO-3 | 16A | 140V | 150W | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-204 (TO-3) | 1.4V @ 800mA, 8A | 10mA | 15 @ 8A, 4V | ||
2SA1943OTU | TRANS PNP 250V 17A TO264-3 | onsemi | TO-264-3, TO-264AA | 17A | 250V | 150W | Through Hole | PNP | -50°C ~ 150°C (TJ) | TO-264-3 | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 30MHz | |
BU323ZG | TRANS NPN DARL 350V 10A TO247-3 | onsemi | TO-247-3 | 10A | 350V | 150W | Through Hole | NPN - Darlington | -65°C ~ 175°C (TJ) | TO-247-3 | 1.7V @ 250mA, 10A | 100µA | 500 @ 5A, 4.6V | 2MHz | |
MJH11020G | TRANS NPN DARL 200V 15A TO247-3 | onsemi | TO-247-3 | 15A | 200V | 150W | Through Hole | NPN - Darlington | -65°C ~ 150°C (TJ) | TO-247-3 | 4V @ 150mA, 15A | 1mA | 400 @ 10A, 5V | 3MHz | |
2SC3857 | TRANS NPN 200V 15A MT-200 | Sanken | 3-ESIP | 15A | 200V | 150W | Through Hole | NPN | 150°C (TJ) | MT-200 | 3V @ 1A, 10A | 100µA (ICBO) | 50 @ 5A, 4V | 20MHz | |
2SD2401 | TRANS NPN DARL 150V 12A MT-200 | Sanken | 3-ESIP | 12A | 150V | 150W | Through Hole | NPN - Darlington | 150°C (TJ) | MT-200 | 2.5V @ 7mA, 7A | 100µA (ICBO) | 5000 @ 7A, 4V | 55MHz | |
BUW48 | TRANS NPN 60V 30A TO218-3 | STMicroelectronics | TO-218-3 | 30A | 60V | 150W | Through Hole | NPN | 175°C (TJ) | TO-218-3 | 1.4V @ 4A, 40A | 8MHz | |||
MJ4035 | TRANS NPN DARL 100V 16A TO3 | STMicroelectronics | TO-204AA, TO-3 | 16A | 100V | 150W | Chassis Mount | NPN - Darlington | 200°C (TJ) | TO-3 | 4V @ 80mA, 16A | 3mA | 1000 @ 10A, 3V | ||
TTA1943(Q) | TRANS PNP 230V 15A TO3P | Toshiba Semiconductor and Storage | TO-3PL | 15A | 230V | 150W | Through Hole | PNP | 150°C (TJ) | TO-3P(L) | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 30MHz |
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