Найдено: 10
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
KSE45H8TU TRANS PNP 60V 10A TO220-3 Fairchild Semiconductor TO-220-3 10A 60V 1.67W Through Hole PNP 150°C (TJ) TO-220-3 1V @ 400mA, 8A 10µA 60 @ 2A, 1V 40MHz
D44E2 TRANS NPN DARL 60V 10A TO220 Harris Corporation TO-220-3 10A 60V 1.67W Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-220 2V @ 20mA, 10A 10µA 1000 @ 5A, 5V
D45H4 TRANS PNP 45V 10A TO220 Harris Corporation TO-220-3 10A 45V 1.67W Through Hole PNP 150°C (TJ) TO-220 1.5V @ 400mA, 8A 10µA 35 @ 2A, 1V 135MHz
D44E1 TRANS NPN DARL 40V 10A TO220 Harris Corporation TO-220-3 10A 40V 1.67W Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-220 2V @ 20mA, 10A 10µA 1000 @ 5A, 5V
KSE45H8TU TRANS PNP 60V 10A TO220-3 onsemi TO-220-3 10A 60V 1.67W Through Hole PNP 150°C (TJ) TO-220-3 1V @ 400mA, 8A 10µA 60 @ 2A, 1V 40MHz
KSE44H11 TRANS NPN 80V 10A TO220-3 onsemi TO-220-3 10A 80V 1.67W Through Hole NPN 150°C (TJ) TO-220-3 1V @ 400mA, 8A 10µA 60 @ 2A, 1V 50MHz
KSE45H8 TRANS PNP 60V 10A TO220-3 onsemi TO-220-3 10A 60V 1.67W Through Hole PNP 150°C (TJ) TO-220-3 1V @ 400mA, 8A 10µA 60 @ 2A, 1V 40MHz
KSE45H11 TRANS PNP 80V 10A TO220-3 onsemi TO-220-3 10A 80V 1.67W Through Hole PNP 150°C (TJ) TO-220-3 1V @ 400mA, 8A 10µA 60 @ 2A, 1V 40MHz
KSE45H11TU TRANS PNP 80V 10A TO220-3 onsemi TO-220-3 10A 80V 1.67W Through Hole PNP 150°C (TJ) TO-220-3 1V @ 400mA, 8A 10µA 60 @ 2A, 1V 40MHz
KSE44H11TU TRANS NPN 80V 10A TO220-3 onsemi TO-220-3 10A 80V 1.67W Through Hole NPN 150°C (TJ) TO-220-3 1V @ 400mA, 8A 10µA 60 @ 2A, 1V 50MHz