• Тип корпуса
    • Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Серия
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Списком Таблицей
Найдено: 19
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Серия
APT13003DZTR-G1 TRANS NPN 450V 1.5A TO92 Diodes Incorporated TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.5A 450V 1.1W Through Hole NPN -65°C ~ 150°C (TJ) TO-92 400mV @ 250mA, 1A 5 @ 1A, 2V 4MHz
APT13003DU-E1 TRANS NPN DARL 450V 1.5A TO126 Diodes Incorporated TO-225AA, TO-126-3 1.5A 450V 1.1W Through Hole NPN - Darlington -65°C ~ 150°C (TJ) TO-126 400mV @ 250mA, 1A 10µA 16 @ 500mA, 2V 4MHz
APT13003EU-E1 TRANS NPN 465V 1.5A TO126 Diodes Incorporated TO-225AA, TO-126-3 1.5A 465V 1.1W Through Hole NPN -65°C ~ 150°C (TJ) TO-126 400mV @ 250mA, 1A 10µA 15 @ 300mA, 2V 4MHz Automotive, AEC-Q101
APT13003HZTR-G1 TRANS NPN 465V 1.5A TO92 Diodes Incorporated TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.5A 465V 1.1W Through Hole NPN -65°C ~ 150°C (TJ) TO-92 400mV @ 250mA, 1A 13 @ 500mA, 2V 4MHz
APT13003EZTR-G1 TRANS NPN 465V 1.5A TO92 Diodes Incorporated TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.5A 465V 1.1W Through Hole NPN -65°C ~ 150°C (TJ) TO-92 400mV @ 250mA, 1A 13 @ 500mA, 2V 4MHz
FJN3303TA TRANS NPN 400V 1.5A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 10µA (ICBO) 14 @ 500mA, 2V 4MHz
FJN3303BU TRANS NPN 400V 1.5A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 10µA (ICBO) 14 @ 500mA, 2V 4MHz
FJN13003TA TRANS NPN 400V 1.5A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 9 @ 500mA, 2V 4MHz
FJN3303BU TRANS NPN 400V 1.5A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 10µA (ICBO) 14 @ 500mA, 2V 4MHz
FJN3303TA TRANS NPN 400V 1.5A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 10µA (ICBO) 14 @ 500mA, 2V 4MHz
FJN13003BU TRANS NPN 400V 1.5A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 9 @ 500mA, 2V 4MHz
FJN3303TA POWER BIPOLAR TRANSISTOR, NPN Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 10µA (ICBO) 14 @ 500mA, 2V 4MHz
FJN3303BU POWER BIPOLAR TRANSISTOR, NPN Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 1.5A 400V 1.1W Through Hole NPN 150°C (TJ) TO-92-3 3V @ 500mA, 1.5A 10µA (ICBO) 14 @ 500mA, 2V 4MHz
2SC6142(Q) TRANS NPN 375V 1.5A PW-MOLD2 Toshiba Semiconductor and Storage TO-251-3 Stub Leads, IPak 1.5A 375V 1.1W Through Hole NPN 150°C (TJ) PW-MOLD2 900mV @ 100mA, 800mA 50µA (ICBO) 100 @ 100mA, 5V
TTC008(Q) TRANS NPN 285V 1.5A PW-MOLD2 Toshiba Semiconductor and Storage TO-251-3 Short Leads, IPak, TO-251AA 1.5A 285V 1.1W Through Hole NPN 150°C (TJ) PW-MOLD2 1V @ 62.5mA, 500mA 10µA (ICBO) 80 @ 1mA, 5V
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