Найдено: 120
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Рабочая температура
Тип корпуса
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
2N3725 TIN/LEAD TRANS NPN 50V 1.2A TO39 Central Semiconductor Corp TO-205AD, TO-39-3 Metal Can 1.2A 50V 800mW Through Hole NPN -65°C ~ 200°C (TJ) TO-39 950mV @ 100mA, 1A 10µA 60 @ 100mA, 1V 300MHz
MPSA14D26Z TRANS NPN DARL 30V 1.2A TO92-3 Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 20000 @ 100mA, 5V 125MHz
MPSA65_D27Z TRANS PNP DARL 30V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole PNP - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 20000 @ 100mA, 5V 100MHz
MMBTA64 TRANS PNP DARL 30V 1.2A SOT23-3 onsemi TO-236-3, SC-59, SOT-23-3 1.2A 30V 350mW Surface Mount PNP - Darlington -55°C ~ 150°C (TJ) SOT-23-3 1.5V @ 100µA, 100mA 100nA (ICBO) 20000 @ 100mA, 5V 125MHz
TN6718A TRANS NPN 100V 1.2A TO226-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1.2A 100V 1W Through Hole NPN -55°C ~ 150°C (TJ) TO-226-3 500mV @ 10mA, 250mA 100nA (ICBO) 50 @ 250mA, 1V
TN6725A_D75Z TRANS NPN DARL 50V 1.2A TO226 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 1.2A 50V 1W Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-226 1.5V @ 2mA, 1A 100nA (ICBO) 4000 @ 1A, 5V
2N6426_D74Z TRANS NPN DARL 40V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 40V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 500µA, 500mA 1µA 20000 @ 500mA, 5V
MPSA13_D75Z TRANS NPN DARL 30V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 10000 @ 100mA, 5V 125MHz
KSA1220AYS TRANS PNP 160V 1.2A TO126 onsemi TO-225AA, TO-126-3 1.2A 160V 1.2W Through Hole PNP 150°C (TJ) TO-126 700mV @ 200mA, 1A 1µA (ICBO) 160 @ 300mA, 5V 175MHz
BC517_D26Z TRANS NPN DARL 30V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole NPN - Darlington -55°C ~ 150°C (TJ) TO-92-3 1V @ 100µA, 100mA 100nA (ICBO) 30000 @ 20mA, 2V
BCP52 TRANS PNP 60V 1.2A SOT223-4 onsemi TO-261-4, TO-261AA 1.2A 60V 1.5W Surface Mount PNP -55°C ~ 150°C (TJ) SOT-223-4 500mV @ 50mA, 500mA 100nA (ICBO) 40 @ 150mA, 2V
MPSA63_D74Z TRANS PNP DARL 30V 1.2A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 1.2A 30V 625mW Through Hole PNP - Darlington -55°C ~ 150°C (TJ) TO-92-3 1.5V @ 100µA, 100mA 100nA (ICBO) 10000 @ 100mA, 5V 125MHz
MMBTA13 TRANS NPN DARL 30V 1.2A SOT23-3 onsemi TO-236-3, SC-59, SOT-23-3 1.2A 30V 350mW Surface Mount NPN - Darlington -55°C ~ 150°C (TJ) SOT-23-3 1.5V @ 100µA, 100mA 100nA (ICBO) 10000 @ 100mA, 5V 125MHz
MPSW3725 TRANS NPN 40V 1.2A TO226-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1.2A 40V 1W Through Hole NPN -55°C ~ 150°C (TJ) TO-226-3 950mV @ 100mA, 1A 100nA (ICBO) 60 @ 100mA, 1V 250MHz
MPSW3725 SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 1.2A 40V 1W Through Hole NPN -55°C ~ 150°C (TJ) TO-226-3 950mV @ 100mA, 1A 100nA (ICBO) 60 @ 100mA, 1V 250MHz